SemiNex Corp
SemiNex delivers the highest available power at infrared wavelengths between 12xx and 19xx nm. When necessary we will further optimize the design of our InP laser chips to meet our customers' specific optical and electrical performance needs. Diodes, bars and packages are tested to meet customer and market performance demands. Typical results and packaging options are shown. Contact SemiNex for additional details or to discuss your specific requirements.
SemiNex Corp
'
'
SemiNex CorpSemiNex Corp

TO9 - Uncapped


Symbol TO9-211TO9-205TO9-206TO9-187TO9-152TO9-155TO9-121TO9-111TO9-126TO9-118TO9-116TO9-148TO9-156TO9-183TO9-163 Units
Optical
Wavelength λc127012901290131013301380146514801480155015751575158015801650nm (±20)
Output Power (CW) P° 2.502.502.251.802.002.501.800.001.801.601.601.800.201.601.10watts
Chip Cavity Length CL 250025001500250025002500250015002500250025002500125025002500μm
Emitter Width W 9595959595959595959595180959595μm
Emitter Height H 111111111111111μm
Spectral Width δλ 101010101010101510101015151510nm 3dB
Slope Efficiency η° 0.300.300.450.300.430.450.300.350.300.250.300.2500.250.25W/A
Fast Axis Div.* Θ_perp 303030302828282828282830282830deg FWHM
Slow Axis Div. Θ_parallel 1010101099999991491410deg FWHM
Electrical
Power Conversion Eff. η 2020255252513151312123142513%
Operating Current Iop 775686.566.5888801376A
Threshold Current Ith 0.50.50.50.50.50.50.50.50.50.50.510.510.7A
Operating Voltage Vop 1.71.71.76.221.61.721.71.71.79.501.71.8V
Series Resistance Rs 0.10.10.140.070.050.080.080.080.080.080.080.1400.10.2ohm
Mechanical
Weight 1.51.51.51.51.51.51.51.51.51.51.51.51.51.51.5g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Uncapped TO9 specifications assume heatsinking underneath laser chip.

SemiNex CorpSemiNex Corp
TO9 - Capped


Symbol TO9-209-161TO9-152-161TO9-155-114TO9-155-161TO9-121-114TO9-121-161TO9-126-114TO9-126-161TO9-118-114TO9-118-161TO9-116-161TO9-183-161TO9-156-161TO9-114-161 Units
Optical
Wavelength λc12801345139513951480148014951495156515651590159515951595nm (±20)
Output Power (CW) P° 1.252.002.002.001.801.801.601.601.601.601.701.700.551.80watts
Chip Cavity Length CL 15002500250025002500250025002500250025002500250012502500μm
Emitter Width W 50959595959595959595959595180μm
Emitter Height H 11111111111111μm
Spectral Width δλ 101010101010101010101015150nm 3dB
Slope Efficiency η° 0.320.400.400.400.360.360.250.250.250.250.250.250.150.25W/A
Fast Axis Div.* Θ_perp 3028282828282828282828282828deg FWHM
Slow Axis Div. Θ_parallel 109999999999999deg FWHM
Electrical
Power Conversion Eff. η 1525252520201616161616251417%
Operating Current Iop 477766667771.63.58A
Threshold Current Ith 0.50.50.50.50.50.50.50.50.50.50.510.51A
Operating Voltage Vop 1.91.41.41.41.41.41.41.41.41.41.41.61.41.4V
Series Resistance Rs 0.220.080.080.080.050.050.080.080.050.050.050.10.220.04ohm
Mechanical
Weight 1.52222222222222g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Capped TO9 specifications assume heatsinking only on flat surface where pins extend.

SemiNex CorpSemiNex Corp
TO9 - Single Mode


Symbol TO9-154TO9-154-161TO9-189TO9-189-161TO9-161TO9-161-161TO9-105TO9-105-161TO9-108TO9-140TO9-108-161TO9-140-161TO9-124-161 Units
Optical
Wavelength λc1320133515321545155015651565158016401650165516651665nm (±20)
Output Power (CW) P° 0.450.450.400.360.330.320.400.380.250.240.200.200.30watts
Chip Cavity Length CL 2500250025002500125012502500250025001250250012502500μm
Emitter Width W 5544444445455μm
Emitter Height H 1111111111111μm
Spectral Width δλ 10101010101010101010101010nm 3dB
Slope Efficiency η° 0.340.340.300.300.300.300.300.300.250.350.250.300.26W/A
Fast Axis Div.* Θ_perp 30303030303030303030303030deg FWHM
Slow Axis Div. Θ_parallel 10101010101010101010101010deg FWHM
Cap NoYesNoYesNoYesNoYesNoNoYesYesYes
Electrical
Power Conversion Eff. η 14141212141413121017101412%
Operating Current Iop 1.21.21.21.20.90.91.21.210.6510.651.2A
Threshold Current Ith 0.050.050.050.050.050.050.050.050.050.050.050.050.05A
Operating Voltage Vop 2.52.62.52.52.62.62.52.52.42.22.42.22V
Series Resistance Rs 1.31.31.31.30.190.191.31.31.621.621.3ohm
Mechanical
Weight 1.521.521.521.521.51.5222g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Uncapped TO9 specifications assume heatsinking underneath laser chip.
Capped TO9 specifications assume heatsinking only on flat surface where pins extend.

SemiNex CorpSemiNex Corp
TO9 - Lensed


Symbol TO9-189-149 Units
Optical
Wavelength λc1532nm (±20)
Output Power (CW) P° 0.40watts
Chip Cavity Length CL 2500μm
Emitter Width W 4μm
Emitter Height H 1μm
Spectral Width δλ 10nm 3dB
Slope Efficiency η° 0.30W/A
Fast Axis Div.* Θ_perp 30deg FWHM
Slow Axis Div. Θ_parallel 10deg FWHM
Electrical
Power Conversion Eff. η 12%
Operating Current Iop 1.2A
Threshold Current Ith 0.05A
Operating Voltage Vop 2.5V
Series Resistance Rs 1.3ohm
Mechanical
Weight 1.5g
Operating Temp.** -40 to 60°C
Storage Temp. -40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
*Fast and Slow axis matched - Units are deg FWHM.
Uncapped TO9 specifications assume heatsinking underneath laser chip.
Capped TO9 specifications assume heatsinking only on flat surface where pins extend.

SemiNex CorpSemiNex Corp
TO9 - Lensed Capped


Symbol TO9-209-115TO9-209-139TO9-126-115TO9-126-139TO9-105-139TO9-116-115TO9-131-140TO9-131-140 Units
Optical
Wavelength λc12801280149514951580159016051605nm (±20)
Output Power (CW) P° 1.251.251.601.800.361.401.301.30watts
Chip Cavity Length CL 15001500250025002500250025002500μm
Emitter Width W 505095954955050μm
Emitter Height H 11111111μm
Spectral Width δλ 10101010101000nm 3dB
Slope Efficiency η° 0.320.320.250.300.300.250.200.20W/A
Fast Axis Div.* Θ_perp 0.3100.3960.399deg FWHM
Slow Axis Div. Θ_parallel 10109910999deg FWHM
Electrical
Power Conversion Eff. η 1515161312101212%
Operating Current Iop 44681.2866A
Threshold Current Ith 0.50.50.50.50.050.50.50.5A
Operating Voltage Vop 1.91.91.41.72.521.81.8V
Series Resistance Rs 0.220.220.080.081.31.70.080.08ohm
Mechanical
Weight 1.51.521.52222g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Capped TO9 specifications assume heatsinking only on flat surface where pins extend.

All statements, technical information and recommendations related to the product herein are based upon information believed to be reliable or accurate. The accuracy or completeness herein is not guaranteed, and no responsibility is assumed for any inaccuracies. The user assumes all risks and liability whatsoever in connection with the use of a product or its application. SemiNex Corporation reserves the right to change at any time without notice the design, specification, deduction, fit or form of its described herein, including withdrawal at any time of a product offered for sale herein. Users are encouraged to visit www.seminex.com for the latest data. SemiNex Corporation makes no representations that the products herein are free from any intellectual property claims of others. Please contact SemiNex for more information. © 2016 SemiNex Corporation

SemiNex Corporation ● 100 Corporate Place ● Peabody, MA 01960 ● 978-326-7700 ● Email: info@seminex.com ● www.seminex.com

Date Created: Jun 6 2020 12:30AM UTC