SemiNex delivers the highest available power at infrared wavelengths between 12xx and 19xx nm. When necessary we will further optimize the design of our InP laser chips to meet our customers' specific optical and electrical performance needs. Diodes, bars and packages are tested to meet customer and market performance demands. Typical results and packaging options are shown. Contact SemiNex for additional details or to discuss your specific requirements.
Laser Diode Chip
High Power SemiNex Laser Diodes
Multi Mode and Single Mode
12xx to 19xx nm
Custom Wavelengths Available
Applications
OEM Medical
Consumer Medical
Research
DPSS pump source
LiDAR
Military / Aerospace
Features
Cost effective
High Output Power
High Dynamic Range
High Efficiency
Laser Chips
| | Symbol | CHP-103 | CHP-104 | CHP-105 | CHP-108 | CHP-107 | CHP-196 | CHP-124 | CHP-167 | Units |
|---|
| Optical | | | | | | | | | | |
|---|
| Wavelength | λc | 1310 | 1350 | 1450 | 1470 | 1470 | 1470 | 1550 | 1940 | nm (±20) |
| Output Power (CW)* | P° | 5.70 | 5.60 | 5.00 | 5.00 | 7.00 | 7.00 | 4.20 | 1.10 | watts (±10%) |
| Chip Cavity Length | CL | 2500 | 2500 | 2500 | 2500 | 2500 | 2500 | 2500 | 1500 | μm |
| Chip Width | W | 500 | 500 | 500 | 500 | 500 | 500 | 500 | 500 | μm |
| Emitter Width | W | 95 | 95 | 95 | 95 | 180 | 350 | 95 | 150 | μm |
| Emitter Height | H | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | μm |
| Spectral Width | δλ | 15 | 15 | 15 | 15 | 15 | 15 | 15 | 10 | nm 3dB |
| Slope Efficiency | η° | 0.50 | 0.45 | 0.40 | 0.38 | 0.37 | 0.45 | 0.35 | 0.21 | W/A |
| Fast Axis Div. | Θ_perp | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 44 | deg FWHM |
| Slow Axis Div. | Θ_parallel | 9 | 9 | 9 | 9 | 9 | 9 | 9 | 11 | deg FWHM |
| Electrical | | | | | | | | | | |
|---|
| Power Conversion Eff. | η | 28 | 23 | 21 | 22 | 21 | 25 | 18 | 20 | % |
| Threshold Current | Ith | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 2 | 0.5 | 0.5 | A |
| Operating Current | Iop | 12 | 14 | 14 | 13 | 21 | 20 | 14 | 4.5 | A |
| Operating Voltage | Vop | 1.7 | 1.8 | 1.7 | 1.7 | 1.7 | 1.35 | 1.7 | 1.3 | V |
| Mechanical | | | | | | | | | | |
|---|
| Weight | | 0.05 | 0.05 | 0.05 | 0.05 | 0.05 | 0.05 | 0.05 | 0.05 | g |
| Operating Temp.** | | -40 to 60 | -40 to 60 | -40 to 60 | -40 to 60 | -40 to 60 | -40 to 60 | -40 to 60 | -40 to 60 | °C |
| Storage Temp. | | -40 to 80 | -40 to 80 | -40 to 80 | -40 to 80 | -40 to 80 | -40 to 80 | -40 to 80 | -40 to 80 | °C |
Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Single Mode Laser Chips
Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
*CW As measured on a C-Mount with Indium solder
Single Mode Laser Chips Long Cavity
| | Symbol | CHP-248 | CHP-288 | CHP-289 | CHP-290 | CHPm-181 | CHP-285 | CHP-286 | CHP-287 | CHP-122 | CHP-128 | Units |
|---|
| Optical | | | | | | | | | | | | |
|---|
| Wavelength | λc | 1310 | 1310 | 1310 | 1310 | 1310 | 1550 | 1550 | 1550 | 1550 | 1625 | nm (±20) |
| Output Power (CW)* | P° | 0.45 | 0.45 | 0.45 | 0.45 | 0.45 | 0.35 | 0.35 | 0.35 | 0.60 | 0.45 | watts (±10%) |
| Chip Cavity Length | CL | 2500 | 2500 | 2500 | 2500 | 2500 | 2500 | 2500 | 2500 | 2500 | 2500 | μm |
| Chip Width | W | 500 | 500 | 500 | 500 | 625 | 500 | 500 | 500 | 500 | 500 | μm |
| Emitter Width | W | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | μm |
| Emitter Height | H | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | μm |
| Spectral Width | δλ | 15 | 80 | 80 | 80 | 85 | 80 | 80 | 80 | 15 | 15 | nm 3dB |
| Slope Efficiency | η° | 0.50 | 0.40 | 0.40 | 0.45 | 0.45 | 0.35 | 0.35 | 0.35 | 0.50 | 0.30 | W/A |
| Fast Axis Div. | Θ_perp | 30 | 30 | 30 | 30 | 30 | 30 | 30 | 30 | 30 | 30 | deg FWHM |
| Slow Axis Div. | Θ_parallel | 13 | 16 | 16 | 16 | 16 | 20 | 20 | 20 | 13 | 13 | deg FWHM |
| Electrical | | | | | | | | | | | | |
|---|
| Power Conversion Eff. | η | 15 | 22.5 | 22.5 | 22.5 | 22.5 | 17.5 | 17.5 | 17.5 | 11 | 14 | % |
| Threshold Current | Ith | 0.05 | 0 | 0.05 | 0 | 0.05 | 0 | 0 | 0 | 0.05 | 0.05 | A |
| Operating Current | Iop | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1.8 | 1.6 | A |
| Operating Voltage | Vop | 2.7 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 3.6 | 3.6 | V |
| Mechanical | | | | | | | | | | | | |
|---|
| Weight | | 0.05 | 0.05 | 0.05 | 0.05 | 0.05 | 0.05 | 0.05 | 0.05 | 0.05 | 0.05 | g |
| Operating Temp.** | | -40 to 60 | -20 to 75 | -20 to 75 | -20 to 75 | -40 to 100 | -20 to 75 | -20 to 75 | -20 to 75 | -40 to 60 | -40 to 60 | °C |
| Storage Temp. | | -40 to 80 | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 100 | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 80 | -40 to 80 | °C |
Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
*CW As measured on a C-Mount with Indium solder
Pulsed* Laser Chips
| | Symbol | CHP-148 | CHP-149 | CHP-150 | CHP-151 | Units |
|---|
| Optical | | | | | | |
|---|
| Wavelength | λc | 1550 | 1550 | 1550 | 1550 | nm (±20) |
| Output Power (<10ns) | P° | 14.00 | 25.00 | 40.00 | 60.00 | watts (±10%) |
| Output Power (150ns) | P° | 9.00 | 14.00 | 24.00 | 30.00 | watts (±10%) |
| Chip Cavity Length | CL | 2500 | 2500 | 2500 | 2500 | μm |
| Chip Width | W | 500 | 500 | 500 | 500 | μm |
| No. of Junctions | | 1 | 1 | 1 | 1 | |
| Emitter Width | W | 50 | 95 | 180 | 350 | μm |
| Emitter Height | H | 1 | 1 | 1 | 1 | μm |
| Spectral Width | δλ | 15 | 15 | 15 | 15 | nm 3dB |
| Slope Efficiency | η° | 0.20 | 0.25 | 0.25 | 0.35 | W/A |
| Fast Axis Div. | Θ_perp | 30 | 30 | 30 | 30 | deg FWHM |
| Slow Axis Div. | Θ_parallel | 14 | 10 | 14 | 10 | deg FWHM |
| Electrical | | | | | | |
|---|
| Power Conversion Eff. | η | 4 | 4 | 3 | 3.75 | % |
| Threshold Current | Ith | 0.5 | 0.7 | 2 | 2.5 | A |
| Operating Current (<10ns) | Iop | 70 | 100 | 160 | 200 | A |
| Operating Current (150ns) | Iop | 35 | 50 | 80 | 100 | A |
| Operating Voltage | Vop | 4.7 | 3.5 | 9.5 | 8 | V |
| Mechanical | | | | | | |
|---|
| Weight | | 0.05 | 0.05 | 0.05 | 0.05 | g |
| Operating Temp.** | | -40 to 60 | -40 to 60 | -40 to 60 | -40 to 60 | °C |
| Storage Temp. | | -40 to 80 | -40 to 80 | -40 to 80 | -40 to 80 | °C |
Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
*Pulsed as measured on a C-Mount with Indium solder - P-Side Down.
All statements, technical information and recommendations related to the product herein are based upon information believed to be reliable
or accurate. The accuracy or completeness herein is not guaranteed, and no responsibility is assumed for any
inaccuracies. The user assumes all risks and liability whatsoever in connection with the use of a product or its application.
SemiNex Corporation reserves the right to change at any time without notice the design, specification, deduction, fit or form of its described
herein, including withdrawal at any time of a product offered for sale herein. Users are encouraged to visit www.seminex.com for the latest
data. SemiNex Corporation makes no representations that the products herein are free from any intellectual property claims of others.
Please contact SemiNex for more information. � 2016 SemiNex Corporation
SemiNex Corporation ● 153 Andover St ● Danvers, MA 01923 ● 978-326-7700 ● Email: info@seminex.com ● www.seminex.com
Date Created: Nov 23 2024 9:44AM UTC