SemiNex Corp
SemiNex delivers the highest available power at infrared wavelengths between 12xx and 19xx nm. When necessary we will further optimize the design of our InP laser chips to meet our customers' specific optical and electrical performance needs. Diodes, bars and packages are tested to meet customer and market performance demands. Typical results and packaging options are shown. Contact SemiNex for additional details or to discuss your specific requirements.
SemiNex Corp
'
'
SemiNex CorpSemiNex Corp

Pulsed* TO9- No Cap / No Lens


Symbol TO9-208TO9-175TO9-184TO9-185TO9-181TO9-200TO9-202TO9-182TO9-190TO9-132TO9-133TO9-171TO9-180TO9-147TO9-149TO9-117TO9-148TO9-170TO9-186TO9-174TO9-176 Units
Optical
Wavelength λc127013101310136014501460146514701525152515251545154515501550156015651625163516501665nm (±20)
Output Power (Pulsed) P° 25.000.7020.0019.0016.0036.0040.0014.000.7014.0014.000.7014.0014.0030.009.0024.000.7011.000.500.40watts
Chip Cavity Length CL 250025002500250025002500250025002500250025002500250025002500250025002500250025002500μm
Emitter Width W 9559595951803509549595495953505018049555μm
Emitter Height H 111111111111111111111μm
Spectral Width δλ 15101001015151010151510101515151510101010nm 3dB
Slope Efficiency η° 0.400.340.350.300.300.250.200.250.300.250.250.300.250.250.350.200.250.300.220.350.18W/A
Fast Axis Div.* Θ_perp 303028282828282830282830282828303030303030deg FWHM
Slow Axis Div. Θ_parallel 1010999141491014141091414141410101010deg FWHM
Electrical
Power Conversion Eff. η 5145454651266105634384105%
Operating Current Iop 100501.850501.8505010035802.55022A
Threshold Current Ith 0.50.050.50.50.513.80.50.05110.050.513.80.510.050.70.050.05A
Operating Voltage Vop 6.23.46.287875.33.5553.4656.669.54.55.83.23.2V
Series Resistance Rs 0.111.30.080.10.10.10.080.071.20.10.11.30.10.10.060.140.141.60.091.11.1ohm
Mechanical
Weight 1.51.51.51.51.5221.521.521.51.51.51.51.51.51.51.51.51.5g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Uncapped TO9 specifications assume heatsinking underneath laser chip.
*Pulsed Power measured at 150ns pulse width and 0.1% duty cycle.



SemiNex CorpSemiNex Corp
Pulsed* TO9- No Cap / Fast Axis Collimated


Symbol TO9-149-141TO9-117-141TO9-148-141 Units
Optical
Wavelength λc155015601565nm (±20)
Output Power (Pulsed) P° 30.009.0024.00watts
Chip Cavity Length CL 250025002500μm
Emitter Width W 35050180μm
Emitter Height H 111μm
Spectral Width δλ 151515nm 3dB
Slope Efficiency η° 0.350.200.25W/A
Fast Axis Div.* Θ_perp 0.30.30.3deg FWHM
Slow Axis Div. Θ_parallel 141414deg FWHM
Electrical
Power Conversion Eff. η 343%
Operating Current Iop 1003580A
Threshold Current Ith 3.80.51A
Operating Voltage Vop 6.669.5V
Series Resistance Rs 0.060.140.14ohm
Mechanical
Weight 022g
Operating Temp.** -40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Uncapped TO9 specifications assume heatsinking underneath laser chip.
*Pulsed Power measured at 150ns pulse width and 0.1% duty cycle.



SemiNex CorpSemiNex Corp
Pulsed* TO9- Cap / No Lens


Symbol TO9-208-161TO9-184-161TO9-175-161TO9-185-161TO9-181-161TO9-200-161TO9-202-161TO9-182-161TO9-133-114TO9-132-161TO9-190-161TO9-171-161TO9-180-161TO9-147-161TO9-149-161TO9-117-114TO9-117-161TO9-148-161TO9-148-114TO9-148-114TO9-170-161TO9-186-161TO9-174-161 Units
Optical
Wavelength λc12701310131013601450146014651470152515251525154515451550155015601560156515651565162516351650nm (±20)
Output Power (Pulsed) P° 25.0020.000.7019.0016.0034.0040.0014.0014.0014.000.700.7014.0014.0030.009.009.0024.0024.0024.000.7011.000.50watts
Chip Cavity Length CL 25002500250025002500250025002500250025002500250025002500250025002500250025002500250025002500μm
Emitter Width W 95955959518035095959544959535050501801801804955μm
Emitter Height H 11111111111111111111111μm
Spectral Width δλ 1510101010151510151510101015151515151520101010nm 3dB
Slope Efficiency η° 0.400.350.340.300.300.250.200.250.250.250.300.300.2500.350.200.200.250.250.250.300.220.35W/A
Fast Axis Div.* Θ_perp 3028302828282828282830302828283030282830303030deg FWHM
Slow Axis Div. Θ_parallel 10910991414914141010914141414141414101010deg FWHM
Electrical
Power Conversion Eff. η 551445465661210563443338410%
Operating Current Iop 1005050501.81.8505010035358080802.5502A
Threshold Current Ith 0.50.50.050.50.513.80.5110.050.050.513.80.50.51110.050.70.05A
Operating Voltage Vop 6.26.22.387875.3553.23.4656.6669.59.59.54.55.83.2V
Series Resistance Rs 0.110.080.60.10.10.10.080.070.10.11.31.30.10.10.060.140.140.140.140.141.60.091.1ohm
Mechanical
Weight 1.5222222221.5222222222221.52g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Capped TO9 specifications assume heatsinking only on flat surface where pins extend.
*Pulsed Power measured at 150ns pulse width and 0.1% duty cycle.



SemiNex CorpSemiNex Corp
Pulsed* TO9- Cap / Fast Axis Collimated


Symbol TO9-208-115TO9-132-115TO9-133-115TO9-147-115TO9-149-115TO9-117-115TO9-148-115 Units
Optical
Wavelength λc1270152515251550155015601565nm (±20)
Output Power (Pulsed) P° 25.0014.0014.0014.0030.009.0024.00watts
Chip Cavity Length CL 2500250025002500250025002500μm
Emitter Width W 9595959535050180μm
Emitter Height H 1111111μm
Spectral Width δλ 15151515151515nm 3dB
Slope Efficiency η° 0.400.250.250.250.350.200.25W/A
Fast Axis Div.* Θ_perp 0.30.30.30.30.30.30.3deg FWHM
Slow Axis Div. Θ_parallel 10141414141414deg FWHM
Electrical
Power Conversion Eff. η 5666343%
Operating Current Iop 505050501003580A
Threshold Current Ith 0.51113.80.51A
Operating Voltage Vop 6.25556.669.5V
Series Resistance Rs 0.110.10.10.10.060.140.14ohm
Mechanical
Weight 1.51.522222g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Capped TO9 specifications assume heatsinking only on flat surface where pins extend.
*Pulsed Power measured at 150ns pulse width and 0.1% duty cycle.



SemiNex CorpSemiNex Corp
Pulsed* TO9- No Cap / Lens Matched


Symbol TO9-208-139TO9-184-139TO9-185-139TO9-185-140TO9-181-139TO9-200-139TO9-202-139TO9-182-139TO9-132-139TO9-133-139TO9-180-139TO9-149-140TO9-147-139TO9-148-139TO9-186-139 Units
Optical
Wavelength λc127013101360136014501460146514701525152515451550155015651635nm (±20)
Output Power (Pulsed) P° 25.0019.0019.0019.0016.0034.0040.0014.0014.0014.0014.0030.0014.0024.0011.00watts
Chip Cavity Length CL 250025002500250025002500250025002500250025002500250025002500μm
Emitter Width W 9595959595180350959595953509518095μm
Emitter Height H 111111111111111μm
Spectral Width δλ 1510001015151015151515151510nm 3dB
Slope Efficiency η° 0.400.350.300.450.300.250.200.250.250.250.250.350.250.250.22W/A
Fast Axis Div.* Θ_perp 109999141491414914141410deg FWHM
Slow Axis Div. Θ_parallel 109999141491414914141410deg FWHM
Electrical
Power Conversion Eff. η 554454656653634%
Operating Current Iop 10050505050100508050A
Threshold Current Ith 0.50.50.50.50.513.80.5110.53.8110.7A
Operating Voltage Vop 6.26.2887875.35566.659.55.8V
Series Resistance Rs 0.110.080.10.10.10.10.080.070.10.10.10.060.10.140.09ohm
Mechanical
Weight 1.51.5221.5221.51.52221.51.51.5g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Capped TO9 specifications assume heatsinking only on flat surface where pins extend.
*Pulsed Power measured at 150ns pulse width and 0.1% duty cycle.



All statements, technical information and recommendations related to the product herein are based upon information believed to be reliable or accurate. The accuracy or completeness herein is not guaranteed, and no responsibility is assumed for any inaccuracies. The user assumes all risks and liability whatsoever in connection with the use of a product or its application. SemiNex Corporation reserves the right to change at any time without notice the design, specification, deduction, fit or form of its described herein, including withdrawal at any time of a product offered for sale herein. Users are encouraged to visit www.seminex.com for the latest data. SemiNex Corporation makes no representations that the products herein are free from any intellectual property claims of others. Please contact SemiNex for more information. © 2016 SemiNex Corporation

SemiNex Corporation ● 100 Corporate Place ● Peabody, MA 01960 ● 978-326-7700 ● Email: info@seminex.com ● www.seminex.com

Date Created: Jun 18 2019 7:03PM UTC