SemiNex Corp
SemiNex delivers the highest available power at infrared wavelengths between 12xx and 19xx nm. When necessary we will further optimize the design of our InP laser chips to meet our customers' specific optical and electrical performance needs. Diodes, bars and packages are tested to meet customer and market performance demands. Typical results and packaging options are shown. Contact SemiNex for additional details or to discuss your specific requirements.
SemiNex Corp
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SemiNex CorpSemiNex Corp

TO56 mini - Uncapped


Symbol TO56m-200TO56m-100TO56m-400TO56m-302TO56m-301TO56m-300TO56m-500TO56m-502 Units
Optical
Wavelength λc12501250131015501550155016151634nm (±20)
Output Power (Pulsed)* P° 20.2211.260.6313.2913.2920.540.580.57watts
Cavity Length (typ.) CL 15001500150012501250125012501250μm
Emitter Width W 95505955018045μm
Emitter Height H 11111111μm
Operating Current Iop 45.41928.6232.26060601.71.7A
Operating Voltage Vop 9.68.55.29.59.5104.75.7V
Threshold Current Ith 1111110.50.5A
Specifications
Spectral Width δλ 1515015151500nm 3dB
Temperature Coeff. δλ/δλT 0.550.550.550.550.550.550.550.55nm/C
Fast Axis Div. Θ_perp 0.30.300.30.30.32626deg FWHM
Slow Axis Div. Θ_parallel 1414141414141414deg FWHM
Pulse Width PW 150150200150150150200200ns
Duty Cycle DC 0.10.10.050.10.10.10.050.05%
Mechanical
Weight 0.310.310.310.310.310.310.310.31g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
*Pulsed Power measured at 150ns pulse width and 0.1% duty cycle.



SemiNex CorpSemiNex Corp

TO56 mini - Capped


Symbol TO56m-200-173TO56m-100-173TO56m-400-173TO56m-301-173TO56m-302-173TO56m-300-173TO56m-500-173TO56m-502-173 Units
Optical
Wavelength λc12501250130015501550155016151630nm (±20)
Output Power (Pulsed)* P° 18.0010.001.630.000.0020.000.500.48watts
Cavity Length (typ.) CL 15001500150012501250125012501250μm
Emitter Width W 95505509518045μm
Emitter Height H 11111111μm
Operating Current Iop 45.41928.6232.26060601.71.6A
Operating Voltage Vop 9.68.55.29.59.5104.75.7V
Threshold Current Ith 1111110.50.5A
Specifications
Spectral Width δλ 1515015151500nm 3dB
Temperature Coeff. δλ/δλT 0.550.550.550.550.550.550.550.55nm/C
Fast Axis Div. Θ_perp 0.30.300.30.30.32626deg FWHM
Slow Axis Div. Θ_parallel 1414141414141414deg FWHM
Pulse Width PW 150150200150150150200200ns
Duty Cycle DC 0.10.10.050.10.10.10.050.05%
Mechanical
Weight 0.50.50.50.50.50.50.50.5g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Capped TO56 specifications assume heatsinking only on flat surface where pins extend.
*Pulsed Power measured at 150ns pulse width and 0.1% duty cycle.

All statements, technical information and recommendations related to the product herein are based upon information believed to be reliable or accurate. The accuracy or completeness herein is not guaranteed, and no responsibility is assumed for any inaccuracies. The user assumes all risks and liability whatsoever in connection with the use of a product or its application. SemiNex Corporation reserves the right to change at any time without notice the design, specification, deduction, fit or form of its described herein, including withdrawal at any time of a product offered for sale herein. Users are encouraged to visit www.seminex.com for the latest data. SemiNex Corporation makes no representations that the products herein are free from any intellectual property claims of others. Please contact SemiNex for more information. © 2016 SemiNex Corporation

SemiNex Corporation ● 100 Corporate Place ● Peabody, MA 01960 ● 978-326-7700 ● Email: info@seminex.com ● www.seminex.com

Date Created: Sep 15 2019 8:37AM UTC