SemiNex Corp
SemiNex delivers the highest available power at infrared wavelengths between 13xx and 17xx nm. When necessary we will further optimize the design of our InP laser chips to meet our customers' specific optical and electrical performance needs. Diodes, bars and packages are tested to meet customer and market performance demands. Typical results and packaging options are shown. Contact SemiNex for additional details or to discuss your specific requirements.
SemiNex Corp
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All statements, technical information and recommendations related to the product herein are based upon information believed to be reliable or accurate. The accuracy or completeness herein is not guaranteed, and no responsibility is assumed for any inaccuracies. The user assumes all risks and liability whatsoever in connection with the use of a product or its application. SemiNex Corporation reserves the right to change at any time without notice the design, specification, deduction, fit or form of its described herein, including withdrawal at any time of a product offered for sale herein. Users are encouraged to visit www.seminex.com for the latest data. SemiNex Corporation makes no representations that the products herein are free from any intellectual property claims of others. Please contact SemiNex for more information. © 2016 SemiNex Corporation

SemiNex Corporation ● 100 Corporate Place ● Peabody, MA 01960 ● 978-326-7700 ● Email: info@seminex.com ● www.seminex.com

Date Created: UTC

SemiNex CorpSemiNex Corp

TO9 - Uncapped


Symbol TO9-152TO9-121TO9-126TO9-116TO9-118 Units
Optical
Wavelength λc13301465148015751575nm (±20)
Output Power (CW) P° 2.01.81.81.61.6watts
Chip Cavity Length CL 25002500250025002500μm
Emitter Width W 9595959595μm
Emitter Height H 11111μm
Spectral Width δλ 1010101010nm 3dB
Slope Efficiency η° 0.430.300.300.300.25W/A
Fast Axis Div. Θ_perp 2828282828deg FWHM
Slow Axis Div. Θ_parallel 99999deg FWHM
Electrical
Power Conversion Eff. η 0.250.130.130.120.12%
Threshold Current Ith 0.50.50.50.50.5A
Operating Current Iop 88888A
Operating Voltage Vop 21.71.71.71.7V
Series Resistance Rs 0.050.080.080.080.08ohm
Mechanical
Weight 1.51.51.51.51.5g
Operating Temp. 10 to 3010 to 3010 to 3010 to 3010 to 30°C
Storage Temp. -20 to 80-20 to 80-20 to 80-20 to 80-20 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C
Unless otherwise indicated all values are nominal.

SemiNex CorpSemiNex Corp
TO9 - Capped


Symbol TO9-155-114TO9-121-114TO9-126-114TO9-118-114 Units
Optical
Wavelength λc1380146515001575nm (±20)
Output Power (CW) P° 2.01.81.61.6watts
Chip Cavity Length CL 2500250025002500μm
Emitter Width W 95959595μm
Emitter Height H 1111μm
Spectral Width δλ 10101010nm 3dB
Slope Efficiency η° 0.400.360.250.25W/A
Fast Axis Div. Θ_perp 28282828deg FWHM
Slow Axis Div. Θ_parallel 9999deg FWHM
Electrical
Power Conversion Eff. η 0.260.20.160.16%
Threshold Current Ith 0.50.50.50.5A
Operating Current Iop 7867A
Operating Voltage Vop 1.41.41.41.4V
Series Resistance Rs 0.080.050.080.05ohm
Mechanical
Weight 2222g
Operating Temp. 10 to 3010 to 3010 to 3010 to 30°C
Storage Temp. -20 to 80-20 to 80-20 to 80-20 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.

SemiNex CorpSemiNex Corp
TO9 - Single Mode


Symbol TO9-154-114TO9-154TO9-105-114TO9-108-114TO9-108TO9-140TO9-124-114 Units
Optical
Wavelength λc1328132815651640164016501660nm (±20)
Output Power (CW) P° 0.50.50.40.20.30.20.3watts
Chip Cavity Length CL 2500250025002500250012502500μm
Emitter Width W 5544455μm
Emitter Height H 1111111μm
Spectral Width δλ 10101010101010nm 3dB
Slope Efficiency η° 0.340.340.300.250.250.350.26W/A
Fast Axis Div. Θ_perp 30303030303030deg FWHM
Slow Axis Div. Θ_parallel 10101010101010deg FWHM
Cap YesNoYesYesNoNoYes
Electrical
Power Conversion Eff. η 0.140.140.120.10.10.170.12%
Threshold Current Ith 0.050.050.050.050.050.050.05A
Operating Current Iop 1.21.21.2110.651.2A
Operating Voltage Vop 2.62.52.52.42.42.22V
Series Resistance Rs 1.31.31.31.61.621.3ohm
Mechanical
Weight 21.5221.51.52g
Operating Temp. 10 to 3010 to 3010 to 3010 to 3010 to 3010 to 3010 to 30°C
Storage Temp. -20 to 80-20 to 80-20 to 80-20 to 80-20 to 80-20 to 80-20 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.

SemiNex CorpSemiNex Corp
TO9 - Lensed Capped


Symbol TO9-126-115TO9-105-125TO9-116-115 Units
Optical
Wavelength λc150015651585nm (±20)
Output Power (CW) P° 1.60.41.4watts
Chip Cavity Length CL 250025002500μm
Emitter Width W 95495μm
Emitter Height H 111μm
Spectral Width δλ 101010nm 3dB
Slope Efficiency η° 0.250.300.25W/A
Fast Axis Div. Θ_perp 0.30.60.3deg FWHM
Slow Axis Div. Θ_parallel 9109deg FWHM
Electrical
Power Conversion Eff. η 0.160.120.1%
Threshold Current Ith 0.50.050.5A
Operating Current Iop 61.28A
Operating Voltage Vop 1.42.52V
Series Resistance Rs 0.081.31.7ohm
Mechanical
Weight 222g
Operating Temp. 10 to 3010 to 3010 to 30°C
Storage Temp. -20 to 80-20 to 80-20 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.

All statements, technical information and recommendations related to the product herein are based upon information believed to be reliable or accurate. The accuracy or completeness herein is not guaranteed, and no responsibility is assumed for any inaccuracies. The user assumes all risks and liability whatsoever in connection with the use of a product or its application. SemiNex Corporation reserves the right to change at any time without notice the design, specification, deduction, fit or form of its described herein, including withdrawal at any time of a product offered for sale herein. Users are encouraged to visit www.seminex.com for the latest data. SemiNex Corporation makes no representations that the products herein are free from any intellectual property claims of others. Please contact SemiNex for more information. © 2016 SemiNex Corporation

SemiNex Corporation ● 100 Corporate Place ● Peabody, MA 01960 ● 978-326-7700 ● Email: info@seminex.com ● www.seminex.com

Date Created: May 24 2017 11:30AM UTC