SemiNex Corp
SemiNex delivers the highest available power at infrared wavelengths between 13xx and 17xx nm. When necessary we will further optimize the design of our InP laser chips to meet our customers' specific optical and electrical performance needs. Diodes, bars and packages are tested to meet customer and market performance demands. Typical results and packaging options are shown. Contact SemiNex for additional details or to discuss your specific requirements.
SemiNex Corp
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All statements, technical information and recommendations related to the product herein are based upon information believed to be reliable or accurate. The accuracy or completeness herein is not guaranteed, and no responsibility is assumed for any inaccuracies. The user assumes all risks and liability whatsoever in connection with the use of a product or its application. SemiNex Corporation reserves the right to change at any time without notice the design, specification, deduction, fit or form of its described herein, including withdrawal at any time of a product offered for sale herein. Users are encouraged to visit www.seminex.com for the latest data. SemiNex Corporation makes no representations that the products herein are free from any intellectual property claims of others. Please contact SemiNex for more information. © 2016 SemiNex Corporation

SemiNex Corporation ● 100 Corporate Place ● Peabody, MA 01960 ● 978-326-7700 ● Email: info@seminex.com ● www.seminex.com

Date Created: UTC

SemiNex CorpSemiNex Corp

TO9 - Uncapped


Symbol TO9-205TO9-206TO9-187TO9-152TO9-155TO9-121TO9-111TO9-126TO9-118TO9-116TO9-148TO9-156TO9-183TO9-163 Units
Optical
Wavelength λc12751275131013301380146514801480155015751575158015801650nm (±20)
Output Power (CW) P° 2.502.251.802.002.501.801.801.801.601.601.800.201.601.10watts
Chip Cavity Length CL 25001500250025002500250015002500250025002500125025002500μm
Emitter Width W 95959595959595959595180959595μm
Emitter Height H 11111111111111μm
Spectral Width δλ 1010101010101510101015151510nm 3dB
Slope Efficiency η° 0.300.450.300.430.450.300.350.300.250.300.2500.250.25W/A
Fast Axis Div. Θ_perp 3030302828282828282830282830deg FWHM
Slow Axis Div. Θ_parallel 10101099999991491410deg FWHM
Electrical
Power Conversion Eff. η 20250.050.250.250.130.150.130.120.120.0300.514%
Operating Current Iop 75686.566.588880131.86A
Threshold Current Ith 0.50.50.50.50.50.50.50.50.50.520.510.7A
Operating Voltage Vop 1.71.76.221.61.721.71.71.79.501.71.8V
Series Resistance Rs 0.10.140.070.050.080.080.080.080.080.080.1400.10.2ohm
Mechanical
Weight 1.51.51.51.51.51.51.51.51.51.51.51.51.51.5g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Uncapped TO9 specifications assume heatsinking underneath laser chip.

SemiNex CorpSemiNex Corp
TO9 - Capped


Symbol TO9-155-114TO9-121-114TO9-126-114TO9-118-114 Units
Optical
Wavelength λc1395148014951565nm (±20)
Output Power (CW) P° 2.001.801.601.60watts
Chip Cavity Length CL 2500250025002500μm
Emitter Width W 95959595μm
Emitter Height H 1111μm
Spectral Width δλ 10101010nm 3dB
Slope Efficiency η° 0.400.360.250.25W/A
Fast Axis Div. Θ_perp 28282828deg FWHM
Slow Axis Div. Θ_parallel 9999deg FWHM
Electrical
Power Conversion Eff. η 0.260.20.160.16%
Operating Current Iop 7667A
Threshold Current Ith 0.50.50.50.5A
Operating Voltage Vop 1.41.41.41.4V
Series Resistance Rs 0.080.050.080.05ohm
Mechanical
Weight 2222g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Capped TO9 specifications assume heatsinking only on flat surface where pins extend.

SemiNex CorpSemiNex Corp
TO9 - Single Mode


Symbol TO9-154TO9-154-114TO9-189TO9-161TO9-105-114TO9-108TO9-140TO9-108-114TO9-124-114 Units
Optical
Wavelength λc132013351532155015801640165016551665nm (±20)
Output Power (CW) P° 0.450.450.400.330.360.250.240.200.30watts
Chip Cavity Length CL 250025002500125025002500125025002500μm
Emitter Width W 554444545μm
Emitter Height H 111111111μm
Spectral Width δλ 101010101010101010nm 3dB
Slope Efficiency η° 0.340.340.300.300.300.250.350.250.26W/A
Fast Axis Div. Θ_perp 303030303030303030deg FWHM
Slow Axis Div. Θ_parallel 101010101010101010deg FWHM
Cap NoYesNoNoYesNoNoYesYes
Electrical
Power Conversion Eff. η 0.140.140.120.140.120.10.170.10.12%
Operating Current Iop 1.21.21.20.91.210.6511.2A
Threshold Current Ith 0.050.050.050.050.050.050.050.050.05A
Operating Voltage Vop 2.52.62.52.62.52.42.22.42V
Series Resistance Rs 1.31.31.30.191.31.621.61.3ohm
Mechanical
Weight 1.521.51.521.51.522g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Uncapped TO9 specifications assume heatsinking underneath laser chip.
Capped TO9 specifications assume heatsinking only on flat surface where pins extend.

SemiNex CorpSemiNex Corp
TO9 - Lensed Capped


Symbol TO9-126-115TO9-116-115 Units
Optical
Wavelength λc14951590nm (±20)
Output Power (CW) P° 1.601.40watts
Chip Cavity Length CL 25002500μm
Emitter Width W 9595μm
Emitter Height H 11μm
Spectral Width δλ 1010nm 3dB
Slope Efficiency η° 0.250.25W/A
Fast Axis Div. Θ_perp 0.30.3deg FWHM
Slow Axis Div. Θ_parallel 99deg FWHM
Electrical
Power Conversion Eff. η 0.160.1%
Operating Current Iop 68A
Threshold Current Ith 0.50.5A
Operating Voltage Vop 1.42V
Series Resistance Rs 0.081.7ohm
Mechanical
Weight 22g
Operating Temp.** -40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Capped TO9 specifications assume heatsinking only on flat surface where pins extend.

All statements, technical information and recommendations related to the product herein are based upon information believed to be reliable or accurate. The accuracy or completeness herein is not guaranteed, and no responsibility is assumed for any inaccuracies. The user assumes all risks and liability whatsoever in connection with the use of a product or its application. SemiNex Corporation reserves the right to change at any time without notice the design, specification, deduction, fit or form of its described herein, including withdrawal at any time of a product offered for sale herein. Users are encouraged to visit www.seminex.com for the latest data. SemiNex Corporation makes no representations that the products herein are free from any intellectual property claims of others. Please contact SemiNex for more information. © 2016 SemiNex Corporation

SemiNex Corporation ● 100 Corporate Place ● Peabody, MA 01960 ● 978-326-7700 ● Email: info@seminex.com ● www.seminex.com

Date Created: Dec 15 2018 5:18PM UTC