SemiNex Corp
SemiNex delivers the highest available power at infrared wavelengths between 13xx and 17xx nm. When necessary we will further optimize the design of our InP laser chips to meet our customers' specific optical and electrical performance needs. Diodes, bars and packages are tested to meet customer and market performance demands. Typical results and packaging options are shown. Contact SemiNex for additional details or to discuss your specific requirements.
SemiNex Corp
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All statements, technical information and recommendations related to the product herein are based upon information believed to be reliable or accurate. The accuracy or completeness herein is not guaranteed, and no responsibility is assumed for any inaccuracies. The user assumes all risks and liability whatsoever in connection with the use of a product or its application. SemiNex Corporation reserves the right to change at any time without notice the design, specification, deduction, fit or form of its described herein, including withdrawal at any time of a product offered for sale herein. Users are encouraged to visit www.seminex.com for the latest data. SemiNex Corporation makes no representations that the products herein are free from any intellectual property claims of others. Please contact SemiNex for more information. © 2016 SemiNex Corporation

SemiNex Corporation ● 100 Corporate Place ● Peabody, MA 01960 ● 978-326-7700 ● Email: info@seminex.com ● www.seminex.com

Date Created: UTC

SemiNex CorpSemiNex Corp

Laser Chips


Symbol CHP-103CHP-196CHP-106CHP-108CHP-105CHP-214CHP-129CHP-107CHP-113CHP-162CHP-124CHP-120CHP-123CHP-190CHP-191 Units
Optical
Wavelength λc131014701475148014801480148014881532154015601560156816251650nm (±20)
Output Power (CW)* P° 5.77.03.75.05.04.84.27.04.25.64.21.45.63.53.2watts
Chip Cavity Length CL 250025001500250025002500200025002500250025001250250025002500μm
Emitter Width W 9535095959595951809518095501809595μm
Emitter Height H 111111111111111μm
Spectral Width δλ 1515151515150151515151501515nm 3dB
Slope Efficiency η° 0.5000.4000.40000.370.350.000.350.3000.300.22W/A
Fast Axis Div. Θ_perp 2828282828280282828282802828deg FWHM
Slow Axis Div. Θ_parallel 999999099999099deg FWHM
Electrical
Power Conversion Eff. η 0.2800.2100.21000.210.1800.180.1300.150.13%
Threshold Current Ith 0.50.50.50.50.50.500.50.50.50.50.500.50.5A
Operating Current Iop 121391314120141414146161414A
Operating Voltage Vop 1.701.701.7001.71.71.71.71.71.51.71.7V
Series Resistance Rs 0.0500.0500.05000.050.050.050.050.1600.50.05ohm
Mechanical
Weight 000000000000000g
Operating Temp. 10 to 3010 to 3010 to 3010 to 3010 to 3010 to 3010 to 3010 to 3010 to 3010 to 3010 to 3010 to 3010 to 3010 to 3010 to 30°C
Storage Temp. -20 to 80-20 to 80-20 to 80-20 to 80-20 to 80-20 to 80-20 to 80-20 to 80-20 to 80-20 to 80-20 to 80-20 to 80-20 to 80-20 to 80-20 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
Unless otherwise indicated all values are nominal.

SemiNex CorpSemiNex Corp
Single Mode Laser Chips


Symbol CHP-156CHP-176CHP-207CHP-222CHP-115CHP-179CHP-144CHP-155 Units
Optical
Wavelength λc13151315148015501550155016301650nm (±20)
Output Power (CW)* P° 0.70.60.50.40.40.40.30.2watts
Chip Cavity Length CL 15001250125012501250150012501250μm
Emitter Width W 55544445μm
Emitter Height H 11111111μm
Spectral Width δλ 1515151515151515nm 3dB
Slope Efficiency η° 0.000.5000.300.300.500.300.30W/A
Fast Axis Div. Θ_perp 303003030303030deg FWHM
Slow Axis Div. Θ_parallel 131301313131313deg FWHM
Electrical
Power Conversion Eff. η 2914011111499%
Threshold Current Ith 0.050.0500.050.050.050.050.05A
Operating Current Iop 1.31.200.950.951.21.60.65A
Operating Voltage Vop 2.63.602.72.73.62.92.7V
Series Resistance Rs 11011111ohm
Mechanical
Weight 00000000g
Operating Temp. 10 to 3010 to 3010 to 3010 to 3010 to 3010 to 3010 to 3010 to 30°C
Storage Temp. -20 to 80-20 to 80-20 to 80-20 to 80-20 to 80-20 to 80-20 to 80-20 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
Unless otherwise indicated all values are nominal.
*CW As measured on a C-Mount with Indium solder

SemiNex CorpSemiNex Corp
Single Mode Laser Chips Long Cavity


Symbol CHP-177CHP-194CHP-122CHP-185CHP-184CHP-128 Units
Optical
Wavelength λc132015321555157016301650nm (±20)
Output Power (CW)* P° 0.80.60.60.60.50.5watts
Chip Cavity Length CL 250025002500375025002500μm
Emitter Width W 544444μm
Emitter Height H 111111μm
Spectral Width δλ 151515151515nm 3dB
Slope Efficiency η° 0.5000.500.250.000W/A
Fast Axis Div. Θ_perp 303030303030deg FWHM
Slow Axis Div. Θ_parallel 131313131313deg FWHM
Electrical
Power Conversion Eff. η 0.17141171414%
Threshold Current Ith 0.050.050.050.10.050.05A
Operating Current Iop 1.81.81.82.31.61.6A
Operating Voltage Vop 2.73.63.62.63.63.6V
Series Resistance Rs 1110.811ohm
Mechanical
Weight 000000g
Operating Temp. 10 to 3010 to 3010 to 3010 to 3010 to 3010 to 30°C
Storage Temp. -20 to 80-20 to 80-20 to 80-20 to 80-20 to 80-20 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
Unless otherwise indicated all values are nominal.
*CW As measured on a C-Mount with Indium solder

SemiNex CorpSemiNex Corp
Pulsed* Laser Chips


Symbol CHP-148CHP-180CHP-175CHP-149CHP-150CHP-157CHP-151CHP-152 Units
Optical
Wavelength λc15601565155015501565156015501550nm (±20)
Output Power (Pulsed)* P° 9.05.56.514.024.015.025.020.0watts
Chip Cavity Length CL 25001250125025002500125025001250μm
Emitter Width W 50509595180180350350μm
Emitter Height H 11111111μm
Spectral Width δλ 1515151515151515nm 3dB
Slope Efficiency η° 0.200.350.350.250.250.400.000.40W/A
Fast Axis Div. Θ_perp 3030303030303028deg FWHM
Slow Axis Div. Θ_parallel 141010101414109deg FWHM
Electrical
Power Conversion Eff. η 0.040.170.060.040.030.0800.07%
Threshold Current Ith 0.50.40.50.720.82.50.75A
Operating Current Iop 35203050803510050A
Operating Voltage Vop 4.75.83.83.59.54.885.8V
Series Resistance Rs 0.110.20.10.050.140.1200.1ohm
Mechanical
Weight 00000000g
Operating Temp. 10 to 3010 to 3010 to 3010 to 3010 to 3010 to 3010 to 3010 to 30°C
Storage Temp. -20 to 80-20 to 80-20 to 80-20 to 80-20 to 80-20 to 80-20 to 80-20 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
Unless otherwise indicated all values are nominal.
*Pulsed as measured on a C-Mount with Indium solder - P-Side Down.

All statements, technical information and recommendations related to the product herein are based upon information believed to be reliable or accurate. The accuracy or completeness herein is not guaranteed, and no responsibility is assumed for any inaccuracies. The user assumes all risks and liability whatsoever in connection with the use of a product or its application. SemiNex Corporation reserves the right to change at any time without notice the design, specification, deduction, fit or form of its described herein, including withdrawal at any time of a product offered for sale herein. Users are encouraged to visit www.seminex.com for the latest data. SemiNex Corporation makes no representations that the products herein are free from any intellectual property claims of others. Please contact SemiNex for more information. © 2016 SemiNex Corporation

SemiNex Corporation ● 100 Corporate Place ● Peabody, MA 01960 ● 978-326-7700 ● Email: info@seminex.com ● www.seminex.com

Date Created: Aug 17 2017 11:32AM UTC