SemiNex Corp
SemiNex delivers the highest available power at infrared wavelengths between 12xx and 19xx nm. When necessary we will further optimize the design of our InP laser chips to meet our customers' specific optical and electrical performance needs. Diodes, bars and packages are tested to meet customer and market performance demands. Typical results and packaging options are shown. Contact SemiNex for additional details or to discuss your specific requirements.
SemiNex Corp
'
'
SemiNex CorpSemiNex Corp

Pulsed* TO56


Symbol TO56-101-138TO56-102-138TO56-103-138TO56-104-138 Units
Optical
Wavelength λc1550155515501550nm (±20)
Output Power (Pulsed)* P° 9.0014.0024.0030.00watts
Cavity Length (typ.) CL 2500250025002500μm
Emitter Width W 5095180350μm
Emitter Height H 1111μm
Operating Current Iop 355080100A
Operating Voltage Vop 8.56.29.59V
Threshold Current Ith 0.50.723.8A
Specifications
Spectral Width δλ 15151515nm 3dB
Temperature Coeff. δλ/δλT 0.550.550.550.55nm/C
Fast Axis Div. Θ_perp 28302828deg FWHM
Slow Axis Div. Θ_parallel 14141414deg FWHM
Pulse Width PW 150150150150ns
Duty Cycle DC 0.10.10.10.1%
Mechanical
Weight 0.50.50.50.5g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
All TO56 products are capped. Capped TO56 specifications assume heatsinking only on flat surface where pins extend.
*Pulsed Power measured at 150ns pulse width and 0.1% duty cycle.

SemiNex CorpSemiNex Corp
Pulsed* TO56 with lens to collimate fast axis


Symbol TO56-101-116TO56-102-116TO56-103-116TO56-104-116 Units
Optical
Wavelength λc1550155015501550nm (±20)
Output Power (Pulsed)* P° 9.0014.0024.0027.00watts
Cavity Length (typ.) CL 2500250025002500μm
Emitter Width W 5095180350μm
Emitter Height H 1111μm
Operating Current Iop 355080100A
Operating Voltage Vop 8.56.29.59V
Threshold Current Ith 0.50.513.8A
Specifications
Spectral Width δλ 15151515nm 3dB
Temperature Coeff. δλ/δλT 0.550.550.550.55nm/C
Fast Axis Div. Θ_perp 0.30.30.30.3deg FWHM
Slow Axis Div. Θ_parallel 14141414deg FWHM
Pulse Width PW 150150150150ns
Duty Cycle DC 0.10.10.10.1%
Mechanical
Weight 0.50.50.50.5g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
All TO56 products are capped. Capped TO56 specifications assume heatsinking only on flat surface where pins extend.
*Pulsed Power measured at 150ns pulse width and 0.1% duty cycle.

SemiNex CorpSemiNex Corp
Pulsed* TO56 with lens to match fast and slow axis


Symbol TO56-101-126TO56-102-126TO56-103-126TO56-104-126 Units
Optical
Wavelength λc1550155515501550nm (±20)
Output Power (Pulsed)* P° 9.0014.0024.0027.00watts
Cavity Length (typ.) CL 2500250025002500μm
Emitter Width W 5095180350μm
Emitter Height H 1111μm
Operating Current Iop 355080100A
Operating Voltage Vop 8.56.29.59V
Threshold Current Ith 0.50.723.8A
Specifications
Spectral Width δλ 15151515nm 3dB
Temperature Coeff. δλ/δλT 0.550.550.550.55nm/C
Fast Axis Div. Θ_perp 14141414deg FWHM
Slow Axis Div. Θ_parallel 14141414deg FWHM
Pulse Width PW 150150150150ns
Duty Cycle DC 0.10.10.10.1%
Mechanical
Weight 0.50.50.50.5g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
All TO56 products are capped. Capped TO56 specifications assume heatsinking only on flat surface where pins extend.
*Pulsed Power measured at 150ns pulse width and 0.1% duty cycle.

All statements, technical information and recommendations related to the product herein are based upon information believed to be reliable or accurate. The accuracy or completeness herein is not guaranteed, and no responsibility is assumed for any inaccuracies. The user assumes all risks and liability whatsoever in connection with the use of a product or its application. SemiNex Corporation reserves the right to change at any time without notice the design, specification, deduction, fit or form of its described herein, including withdrawal at any time of a product offered for sale herein. Users are encouraged to visit www.seminex.com for the latest data. SemiNex Corporation makes no representations that the products herein are free from any intellectual property claims of others. Please contact SemiNex for more information. © 2016 SemiNex Corporation

SemiNex Corporation ● 100 Corporate Place ● Peabody, MA 01960 ● 978-326-7700 ● Email: info@seminex.com ● www.seminex.com

Date Created: Aug 18 2019 5:38PM UTC