SemiNex delivers the highest available power at infrared wavelengths between 12xxnm and 16xxnm as well 19xxnm to 24xxnm. When necessary we will further optimize the design of our InP or GaSb laser chips to meet our customers' specific optical and electrical performance needs. Diodes, bars and packages are tested to meet customer and market performance demands. Typical results and packaging options are shown. Contact SemiNex for additional details or to discuss your specific requirements.Grin Lens f=274um used to match fast axis divergence to slow axis divergence.
B-Mount
High Power Single-Mode and Multi-Mode SemiNex Lasers
12xx to 19xx nm
Custom Wavelengths Available
Lensed Options Available
Applications
OEM Medical
DPSS pump source
LiDAR
Military / Aerospace
Features
Cost effective
High Output Power
High Dynamic Range
High Efficiency
Standard Low Cost Package
Fast axis divergence matched to slow axis
B-Mount
| | Symbol | B-103 | B-123 | B-104 | B-106 | B-122 | B-118 | B-134 | B-165 | Units |
|---|
| Optical | | | | | | | | | | |
|---|
| Wavelength | λc | 1310 | 1375 | 1450 | 1470 | 1470 | 1550 | 1650 | 1940 | nm (±20) |
| Output Power (CW) | P° | 5.70 | 5.60 | 5.00 | 5.00 | 7.00 | 4.20 | 3.20 | 1.10 | watts (±10%) |
| Chip Cavity Length | CL | 2500 | 2500 | 2500 | 2500 | 2500 | 2500 | 2500 | 1500 | μm |
| Emitter Width | W | 95 | 95 | 95 | 95 | 180 | 95 | 95 | 150 | μm |
| Emitter Height | H | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | μm |
| Spectral Width | δλ | 15 | 15 | 15 | 15 | 15 | 15 | 15 | 10 | nm 3dB |
| Slope Efficiency | η° | 0.40 | 0.40 | 0.40 | 0.40 | 0.37 | 0.35 | 0.30 | 0.30 | W/A |
| Fast Axis Div.* | Θ_perp | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 2.8 | deg FWHM |
| Slow Axis Div. | Θ_parallel | 9 | 9 | 9 | 9 | 9 | 9 | 9 | 11 | deg FWHM |
| Electrical | | | | | | | | | | |
|---|
| Power Conversion Eff. | η | 23 | 22 | 21 | 21 | 21 | 18 | 16 | 20 | % |
| Threshold Current | Ith | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.35 | A |
| Operating Current | Iop | 14 | 14 | 14 | 14 | 20 | 14 | 12 | 4 | A |
| Operating Voltage | Vop | 1.8 | 1.8 | 1.7 | 1.8 | 1.7 | 1.7 | 1.7 | 1.3 | V |
| Mechanical | | | | | | | | | | |
|---|
| Weight | | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | g |
| Operating Temp.** | | -40 to 85 | -40 to 85 | -40 to 60 | -40 to 60 | -40 to 60 | -40 to 60 | -40 to 85 | +15 to 35 | °C |
| Storage Temp. | | -40 to 85 | -40 to 85 | -40 to 80 | -40 to 80 | -40 to 80 | -40 to 80 | -40 to 85 | -40 to 80 | °C |
| Operating Voltage Min. | | 1.8 | 1.8 | 1.9 | 1.9 | 0 | 1.5 | 1.6 | 1 | V |
| Operating Voltage Max. | | 2 | 2 | 2 | 2 | 0 | 1.6 | 1.7 | 2 | V |
Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
*Fast Axis Divergence can be changed with lens option.
B-Mount Single Mode
| | Symbol | B-163 | B-115 | B-146 | B-124 | Units |
|---|
| Optical | | | | | | |
|---|
| Wavelength | λc | 1310 | 1550 | 1625 | 1660 | nm (±20) |
| Output Power (CW) | P° | 0.80 | 0.60 | 0.40 | 0.45 | watts (±10%) |
| Chip Cavity Length | CL | 2500 | 2500 | 2500 | 2500 | μm |
| Emitter Width | W | 4 | 4 | 4 | 5 | μm |
| Emitter Height | H | 1 | 1 | 1 | 1 | μm |
| Spectral Width | δλ | 15 | 15 | 15 | 15 | nm 3dB |
| Slope Efficiency | η° | 0.50 | 0.30 | 0.30 | 0.25 | W/A |
| Fast Axis Div.* | Θ_perp | 30 | 30 | 30 | 30 | deg FWHM |
| Slow Axis Div. | Θ_parallel | 10 | 10 | 10 | 10 | deg FWHM |
| Electrical | | | | | | |
|---|
| Power Conversion Eff. | η | 15 | 11 | 11 | 14 | % |
| Threshold Current | Ith | 0.05 | 0.05 | 0.05 | 0.05 | A |
| Operating Current | Iop | 2 | 1.8 | 1.6 | 1.4 | A |
| Operating Voltage | Vop | 2.7 | 3.2 | 3.1 | 2.2 | V |
| Mechanical | | | | | | |
|---|
| Weight | | 0.5 | 0.5 | 0.5 | 0.5 | g |
| Operating Temp.** | | -40 to 60 | -40 to 60 | -40 to 60 | -40 to 60 | °C |
| Storage Temp. | | -40 to 80 | -40 to 80 | -40 to 80 | -40 to 80 | °C |
| Operating Voltage Min. | | 0 | 2.4 | 3 | 2.1 | V |
| Operating Voltage Max. | | 0 | 2.5 | 3.1 | 2.2 | V |
Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
*Fast Axis Divergence can be changed with lens option.
B-Mount With Lens
Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
*Fast Axis Divergence can be changed with lens option.
All statements, technical information and recommendations related to the product herein are based upon information believed to be reliable
or accurate. The accuracy or completeness herein is not guaranteed, and no responsibility is assumed for any
inaccuracies. The user assumes all risks and liability whatsoever in connection with the use of a product or its application.
SemiNex Corporation reserves the right to change at any time without notice the design, specification, deduction, fit or form of its described
herein, including withdrawal at any time of a product offered for sale herein. Users are encouraged to visit www.seminex.com for the latest
data. SemiNex Corporation makes no representations that the products herein are free from any intellectual property claims of others.
Please contact SemiNex for more information. � 2016 SemiNex Corporation
SemiNex Corporation ● 153 Andover St ● Danvers, MA 01923 ● 978-326-7700 ● Email: info@seminex.com ● www.seminex.com
Date Created: Nov 22 2024 8:05PM UTC