SemiNex Corp
SemiNex delivers the highest available power at infrared wavelengths between 12xx and 19xx nm. When necessary we will further optimize the design of our InP laser chips to meet our customers' specific optical and electrical performance needs. Diodes, bars and packages are tested to meet customer and market performance demands. Typical results and packaging options are shown. Contact SemiNex for additional details or to discuss your specific requirements.
SemiNex Corp
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SemiNex CorpSemiNex Corp

TO9 - Uncapped


Symbol TO9-155TO9-111TO9-183TO9-205TO9-211TO9-116TO9-118TO9-126TO9-152TO9-156TO9-163TO9-187TO9-121TO9-206TO9-148 Units
Optical
Wavelength λc138014801580129012701575155014801330158016501310146512901575nm (±20)
Output Power (CW) P° 2.500.001.602.502.501.601.601.802.000.201.101.801.802.251.80watts (±10%)
Chip Cavity Length CL 250015002500250012502500250025002500125025002500250015002500μm
Emitter Width W 9595959595959595959595959595180μm
Emitter Height H 111111111111111μm
Spectral Width δλ 101515101010101010151010101015nm 3dB
Slope Efficiency η° 0.450.350.250.300.300.300.250.300.4300.250.300.300.450.25W/A
Fast Axis Div.* Θ_perp 282828303028282828283030283030deg FWHM
Slow Axis Div. Θ_parallel 9914101099999101091014deg FWHM
Electrical
Power Conversion Eff. η 2515252020121213251413513253%
Operating Current Iop 6.56.5777888813666580A
Threshold Current Ith 0.50.510.50.50.50.50.50.50.50.70.50.50.51A
Operating Voltage Vop 1.621.71.71.71.71.71.7201.86.21.71.79.5V
Series Resistance Rs 0.080.080.10.10.10.080.080.080.0500.20.070.080.140.14ohm
Mechanical
Weight 1.51.51.51.51.51.51.51.51.51.51.51.51.51.51.5g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Uncapped TO9 specifications assume heatsinking underneath laser chip.

SemiNex CorpSemiNex Corp
TO9 - Capped


Symbol TO9-209-161TO9-126-161TO9-121-161TO9-121-114TO9-126-114TO9-156-161TO9-183-161TO9-118-161TO9-116-161TO9-118-114TO9-155-114TO9-152-161TO9-155-161TO9-114-161 Units
Optical
Wavelength λc12801495148014801495159515951565159015651395134513951595nm (±20)
Output Power (CW) P° 1.251.601.801.801.600.551.701.601.701.602.002.002.001.80watts (±10%)
Chip Cavity Length CL 15002500250025002500125025002500250025002500250025002500μm
Emitter Width W 50959595959595959595959595180μm
Emitter Height H 11111111111111μm
Spectral Width δλ 101010101015151010101010100nm 3dB
Slope Efficiency η° 0.320.250.360.360.250.150.250.250.250.250.400.400.400.25W/A
Fast Axis Div.* Θ_perp 3028282828282828282828282828deg FWHM
Slow Axis Div. Θ_parallel 109999999999999deg FWHM
Electrical
Power Conversion Eff. η 1516202016142516161625252517%
Operating Current Iop 466663.51.67777778A
Threshold Current Ith 0.50.50.50.50.50.510.50.50.50.50.50.51A
Operating Voltage Vop 1.91.41.41.41.41.41.61.41.41.41.41.41.41.4V
Series Resistance Rs 0.220.080.050.050.080.220.10.050.050.050.080.080.080.04ohm
Mechanical
Weight 1.52222222222222g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Capped TO9 specifications assume heatsinking only on flat surface where pins extend.

SemiNex CorpSemiNex Corp
TO9 - Single Mode


Symbol TO9-105-161TO9-105TO9-189TO9-189-161TO9-161-161TO9-161TO9-108-161TO9-108TO9-124-161TO9-154-161TO9-154TO9-140TO9-140-161 Units
Optical
Wavelength λc1580156515321545156515501655164016651335132016501665nm (±20)
Output Power (CW) P° 0.380.400.400.360.320.330.200.250.300.450.450.240.20watts (±10%)
Chip Cavity Length CL 2500250025002500125012502500250025002500250012501250μm
Emitter Width W 4444444455555μm
Emitter Height H 1111111111111μm
Spectral Width δλ 10101010101010101010101010nm 3dB
Slope Efficiency η° 0.300.300.300.300.300.300.250.250.260.340.340.350.30W/A
Fast Axis Div.* Θ_perp 30303030303030303030303030deg FWHM
Slow Axis Div. Θ_parallel 10101010101010101010101010deg FWHM
Cap YesNoNoYesYesNoYesNoYesYesNoNoYes
Electrical
Power Conversion Eff. η 12131212141410101214141714%
Operating Current Iop 1.21.21.21.20.90.9111.21.21.20.650.65A
Threshold Current Ith 0.050.050.050.050.050.050.050.050.050.050.050.050.05A
Operating Voltage Vop 2.52.52.52.52.62.62.42.422.62.52.22.2V
Series Resistance Rs 1.31.31.31.30.190.191.61.61.31.31.322ohm
Mechanical
Weight 21.51.5221.521.5221.51.52g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Uncapped TO9 specifications assume heatsinking underneath laser chip.
Capped TO9 specifications assume heatsinking only on flat surface where pins extend.

SemiNex CorpSemiNex Corp
TO9 - Lensed


Symbol TO9-189-149 Units
Optical
Wavelength λc1532nm (±20)
Output Power (CW) P° 0.40watts (±10%)
Chip Cavity Length CL 2500μm
Emitter Width W 4μm
Emitter Height H 1μm
Spectral Width δλ 10nm 3dB
Slope Efficiency η° 0.30W/A
Fast Axis Div.* Θ_perp 30deg FWHM
Slow Axis Div. Θ_parallel 10deg FWHM
Electrical
Power Conversion Eff. η 12%
Operating Current Iop 1.2A
Threshold Current Ith 0.05A
Operating Voltage Vop 2.5V
Series Resistance Rs 1.3ohm
Mechanical
Weight 1.5g
Operating Temp.** -40 to 60°C
Storage Temp. -40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
*Fast and Slow axis matched - Units are deg FWHM.
Uncapped TO9 specifications assume heatsinking underneath laser chip.
Capped TO9 specifications assume heatsinking only on flat surface where pins extend.

SemiNex CorpSemiNex Corp
TO9 - Lensed Capped


Symbol TO9-105-139TO9-131-140TO9-131-140TO9-209-115TO9-209-139TO9-126-115TO9-116-115TO9-126-139 Units
Optical
Wavelength λc15801605160512801280149515901495nm (±20)
Output Power (CW) P° 0.361.301.301.251.251.601.401.80watts (±10%)
Chip Cavity Length CL 25002500250015001500250025002500μm
Emitter Width W 450505050959595μm
Emitter Height H 11111111μm
Spectral Width δλ 10001010101010nm 3dB
Slope Efficiency η° 0.300.200.200.320.320.250.250.30W/A
Fast Axis Div.* Θ_perp 6990.3100.30.39deg FWHM
Slow Axis Div. Θ_parallel 10991010999deg FWHM
Electrical
Power Conversion Eff. η 1212121515161013%
Operating Current Iop 1.26644688A
Threshold Current Ith 0.050.50.50.50.50.50.50.5A
Operating Voltage Vop 2.51.81.81.91.91.421.7V
Series Resistance Rs 1.30.080.080.220.220.081.70.08ohm
Mechanical
Weight 2221.51.5221.5g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Capped TO9 specifications assume heatsinking only on flat surface where pins extend.

All statements, technical information and recommendations related to the product herein are based upon information believed to be reliable or accurate. The accuracy or completeness herein is not guaranteed, and no responsibility is assumed for any inaccuracies. The user assumes all risks and liability whatsoever in connection with the use of a product or its application. SemiNex Corporation reserves the right to change at any time without notice the design, specification, deduction, fit or form of its described herein, including withdrawal at any time of a product offered for sale herein. Users are encouraged to visit www.seminex.com for the latest data. SemiNex Corporation makes no representations that the products herein are free from any intellectual property claims of others. Please contact SemiNex for more information. � 2016 SemiNex Corporation

SemiNex Corporation ● 100 Corporate Place ● Peabody, MA 01960 ● 978-326-7700 ● Email: info@seminex.com ● www.seminex.com

Date Created: Oct 17 2021 4:31PM UTC