SemiNex Corp
SemiNex delivers the highest available power at infrared wavelengths between 12xx and 19xx nm. When necessary we will further optimize the design of our InP laser chips to meet our customers' specific optical and electrical performance needs. Diodes, bars and packages are tested to meet customer and market performance demands. Typical results and packaging options are shown. Contact SemiNex for additional details or to discuss your specific requirements.
SemiNex Corp
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SemiNex CorpSemiNex Corp

Pulsed* TO9- No Cap / No Lens


Symbol TO9-171TO9-190TO9-170TO9-174TO9-176TO9-175 Units
Optical
Wavelength λc154515251625165016651310nm (±20)
Output Power (<10ns) P° 1.081.081.501.400.721.22watts (±10%)
Output Power (150ns) P° 0.700.700.700.500.400.70watts (±10%)
Chip Cavity Length CL 250025002500250025002500μm
No. of Junctions 111111
Emitter Width W 444555μm
Emitter Height H 111111μm
Spectral Width δλ 101010101010nm 3dB
Slope Efficiency η° 0.300.300.300.350.180.34W/A
Fast Axis Div.* Θ_perp 303030303030deg FWHM
Slow Axis Div. Θ_parallel 101010101010deg FWHM
Electrical
Power Conversion Eff. η 1012810514%
Operating Current (<10ns) Iop 3.63.65443.6A
Operating Current (150ns) Iop 1.81.82.5221.8A
Threshold Current Ith 0.050.050.050.050.050.05A
Operating Voltage Vop 3.43.54.53.23.23.4V
Series Resistance Rs 1.31.21.61.11.11.3ohm
Mechanical
Weight 1.521.51.51.51.5g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Uncapped TO9 specifications assume heatsinking underneath laser chip.



SemiNex CorpSemiNex Corp
Pulsed* TO9- No Cap / Fast Axis Collimated


Symbol TO9-117-141TO9-148-141TO9-149-141 Units
Optical
Wavelength λc156015651550nm (±20)
Output Power (<10ns) P° 14.0040.0070.00watts (±10%)
Output Power (150ns) P° 9.0024.0030.00watts (±10%)
Chip Cavity Length CL 250025002500μm
No. of Junctions 111
Emitter Width W 50180350μm
Emitter Height H 111μm
Spectral Width δλ 151515nm 3dB
Slope Efficiency η° 0.200.250.35W/A
Fast Axis Div.* Θ_perp 0.30.30.3deg FWHM
Slow Axis Div. Θ_parallel 141414deg FWHM
Electrical
Power Conversion Eff. η 433%
Operating Current (<10ns) Iop 70160200A
Operating Current (150ns) Iop 3580100A
Threshold Current Ith 0.513.8A
Operating Voltage Vop 69.56.6V
Series Resistance Rs 0.140.140.06ohm
Mechanical
Weight 220g
Operating Temp.** -40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Uncapped TO9 specifications assume heatsinking underneath laser chip.



SemiNex CorpSemiNex Corp
Pulsed* TO9- Cap / No Lens


Symbol TO9-170-161TO9-171-161TO9-190-161TO9-174-161TO9-175-161TO9-117-114TO9-117-161TO9-133-114TO9-132-161TO9-133-114TO9-147-161TO9-180-161TO9-181-161TO9-182-161TO9-186-161TO9-208-161TO9-184-161TO9-185-161TO9-148-114TO9-148-161TO9-148-114TO9-149-161TO9-202-161 Units
Optical
Wavelength λc16251545152516501310156015601525152515251550154514501470163512701310136015651565156515501465nm (±20)
Output Power (<10ns) P° 1.501.081.081.401.2214.0014.0025.0025.0025.0025.0025.0030.0025.0022.0040.0042.0036.0040.0040.0040.0070.0040.00watts (±10%)
Output Power (150ns) P° 0.700.700.700.500.709.009.0014.0014.0014.0014.0014.0016.0014.0011.0025.0020.0019.0024.0024.0024.0030.0040.00watts (±10%)
Chip Cavity Length CL 25002500250025002500250025002500250025002500250025002500250025002500250025002500250025002500μm
No. of Junctions 11111111111111111111111
Emitter Width W 4445550509595959595959595959595180180180350350μm
Emitter Height H 11111111111111111111111μm
Spectral Width δλ 1010101010151515151515101010101510101515201515nm 3dB
Slope Efficiency η° 0.300.300.300.350.340.200.200.250.250.250.250.250.300.250.220.400.350.300.250.250.250.350.20W/A
Fast Axis Div.* Θ_perp 3030303030303028281428282828303028282828302828deg FWHM
Slow Axis Div. Θ_parallel 10101010101414141414149991010991414141414deg FWHM
Electrical
Power Conversion Eff. η 810121014446666555455433336%
Operating Current (<10ns) Iop 53.63.643.67070100100100100100100100100100120120160160160200200A
Operating Current (150ns) Iop 2.51.81.821.835355050505050505050506060808080100100A
Threshold Current Ith 0.050.050.050.050.050.50.511110.50.50.50.70.50.50.51113.83.8A
Operating Voltage Vop 4.53.43.23.22.3665555675.35.86.26.289.59.59.56.67V
Series Resistance Rs 1.61.31.31.10.60.140.140.10.10.10.10.10.10.070.090.110.080.10.140.140.140.060.08ohm
Mechanical
Weight 222222221.5222221.51.52222222g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Capped TO9 specifications assume heatsinking only on flat surface where pins extend.

SemiNex CorpSemiNex Corp

Pulsed* TO9- Cap / Fast Axis Collimated


Symbol TO9-117-115TO9-147-115TO9-132-115TO9-133-115TO9-208-115TO9-165-115TO9-148-115TO9-149-115 Units
Optical
Wavelength λc15601550152515251270131015651550nm (±20)
Output Power (<10ns) P° 14.0025.0025.0025.0040.0042.0040.0070.00watts (±10%)
Output Power (150ns) P° 9.0014.0014.0014.0025.0019.0024.0030.00watts (±10%)
Chip Cavity Length CL 25002500250025002500250025002500μm
No. of Junctions 11111111
Emitter Width W 509595959595180350μm
Emitter Height H 11111111μm
Spectral Width δλ 1515151515101515nm 3dB
Slope Efficiency η° 0.200.250.250.250.400.350.250.35W/A
Fast Axis Div.* Θ_perp 0.30.30.30.30.30.30.30.3deg FWHM
Slow Axis Div. Θ_parallel 1414141410101414deg FWHM
Electrical
Power Conversion Eff. η 46665533%
Operating Current (<10ns) Iop 70100100100100120160100A
Operating Current (150ns) Iop 35505050506080100A
Threshold Current Ith 0.51110.50.513.8A
Operating Voltage Vop 65556.26.29.56.6V
Series Resistance Rs 0.140.10.10.10.110.080.140.06ohm
Mechanical
Weight 221.521.51.522g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Capped TO9 specifications assume heatsinking only on flat surface where pins extend.



SemiNex CorpSemiNex Corp
Pulsed* TO9- No Cap / Lens Matched


Symbol TO9-180-139TO9-181-139TO9-182-139TO9-132-139TO9-147-139TO9-186-139TO9-208-139TO9-165-139TO9-184-139TO9-185-139TO9-185-140TO9-148-139TO9-202-139TO9-149-140 Units
Optical
Wavelength λc15451450147015251550163512701310131013601360156514651550nm (±20)
Output Power (<10ns) P° 25.0030.0025.0025.0025.0022.0040.0042.0042.0036.0054.0040.0040.0070.00watts (±10%)
Output Power (150ns) P° 14.0016.0014.0014.0014.0011.0025.0019.0019.0019.0019.0024.0040.0030.00watts (±10%)
Chip Cavity Length CL 25002500250025002500250025002500250025002500250025002500μm
No. of Junctions 11111111111111
Emitter Width W 9595959595959595959595180350350μm
Emitter Height H 11111111111111μm
Spectral Width δλ 15101015151015101000151515nm 3dB
Slope Efficiency η° 0.250.300.250.250.250.220.400.350.350.300.450.250.200.35W/A
Fast Axis Div.* Θ_perp 9991414101010999141414deg FWHM
Slow Axis Div. Θ_parallel 9991414101010999141414deg FWHM
Electrical
Power Conversion Eff. η 55566455544363%
Operating Current (<10ns) Iop 100100100100100100100120120120120160200200A
Operating Current (150ns) Iop 505050505050506060606080100100A
Threshold Current Ith 0.50.50.5110.70.50.50.50.50.513.83.8A
Operating Voltage Vop 675.3555.86.26.26.2889.576.6V
Series Resistance Rs 0.10.10.070.10.10.090.110.080.080.10.10.140.080.06ohm
Mechanical
Weight 21.51.51.51.51.51.51.51.5221.522g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Capped TO9 specifications assume heatsinking only on flat surface where pins extend.



All statements, technical information and recommendations related to the product herein are based upon information believed to be reliable or accurate. The accuracy or completeness herein is not guaranteed, and no responsibility is assumed for any inaccuracies. The user assumes all risks and liability whatsoever in connection with the use of a product or its application. SemiNex Corporation reserves the right to change at any time without notice the design, specification, deduction, fit or form of its described herein, including withdrawal at any time of a product offered for sale herein. Users are encouraged to visit www.seminex.com for the latest data. SemiNex Corporation makes no representations that the products herein are free from any intellectual property claims of others. Please contact SemiNex for more information. � 2016 SemiNex Corporation

SemiNex Corporation ● 100 Corporate Place ● Peabody, MA 01960 ● 978-326-7700 ● Email: info@seminex.com ● www.seminex.com

Date Created: Oct 17 2021 2:48PM UTC