SemiNex Corp
SemiNex delivers the highest available power at infrared wavelengths between 12xx and 19xx nm. When necessary we will further optimize the design of our InP laser chips to meet our customers' specific optical and electrical performance needs. Diodes, bars and packages are tested to meet customer and market performance demands. Typical results and packaging options are shown. Contact SemiNex for additional details or to discuss your specific requirements.
SemiNex Corp
'
'
SemiNex CorpSemiNex Corp

TO9 - Uncapped


Symbol TO9-111TO9-155TO9-183TO9-205TO9-211TO9-116TO9-126TO9-152TO9-187TO9-121TO9-206TO9-148 Units
Optical
Wavelength λc148013801580129012701575148013301310146512901575nm (±20)
Output Power (CW) P° 1.002.501.602.502.501.601.802.001.801.802.251.80watts (±10%)
Chip Cavity Length CL 150025002500250012502500250025002500250015002500μm
Emitter Width W 9595959595959595959595180μm
Emitter Height H 111111111111μm
Spectral Width δλ 151015101010101010101015nm 3dB
Slope Efficiency η° 0.350.450.250.300.300.300.300.430.300.300.450.25W/A
Fast Axis Div.* Θ_perp 282828282828282828282828deg FWHM
Slow Axis Div. Θ_parallel 991410109991091010deg FWHM
Electrical
Power Conversion Eff. η 1525252020121325513253%
Operating Current Iop 6.56.577788866580A
Threshold Current Ith 0.50.510.50.50.50.50.50.50.50.51A
Operating Voltage Vop 21.61.71.71.71.71.726.21.71.79.5V
Series Resistance Rs 0.080.080.10.10.10.080.080.050.070.080.140.14ohm
Mechanical
Weight 1.51.51.51.51.51.51.51.51.51.51.51.5g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Uncapped TO9 specifications assume heatsinking underneath laser chip.

SemiNex CorpSemiNex Corp
TO9 - Capped


Symbol TO9-209-161TO9-126-161TO9-163-161TO9-121-161TO9-121-114TO9-126-114TO9-156-161TO9-183-161TO9-155-161TO9-118-161TO9-116-161TO9-118-114TO9-155-114TO9-152-161TO9-114-161 Units
Optical
Wavelength λc128014801665148014801480159515951395156515901565139513451595nm (±20)
Output Power (CW) P° 1.251.601.001.801.801.600.551.702.001.601.701.602.002.001.80watts (±10%)
Chip Cavity Length CL 150025002500250025002500125025001500250025002500250025002500μm
Emitter Width W 5095959595959595959595959595180μm
Emitter Height H 111111111111111μm
Spectral Width δλ 101010101010151510101010101010nm 3dB
Slope Efficiency η° 0.320.250.250.360.360.250.150.250.400.250.250.250.400.400.25W/A
Fast Axis Div.* Θ_perp 282830282828282828282828282828deg FWHM
Slow Axis Div. Θ_parallel 10910999999999999deg FWHM
Electrical
Power Conversion Eff. η 151613202016142525161616252517%
Operating Current Iop 4666663.51.67777778A
Threshold Current Ith 0.50.50.70.50.50.50.510.50.50.50.50.50.51A
Operating Voltage Vop 1.91.41.81.41.41.41.41.61.41.41.41.41.41.41.4V
Series Resistance Rs 0.220.081.30.050.050.080.220.10.080.050.050.050.080.080.04ohm
Mechanical
Weight 1.521.5222222222222g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Capped TO9 specifications assume heatsinking only on flat surface where pins extend.

SemiNex CorpSemiNex Corp
TO9 - Single Mode


Symbol TO9-105-161TO9-105TO9-189TO9-189-161TO9-161-161TO9-161TO9-108-161TO9-108TO9-124-161TO9-154-161TO9-154TO9-140TO9-140-161 Units
Optical
Wavelength λc1580156515321545156515501655164016651335132016501665nm (±20)
Output Power (CW) P° 0.380.400.400.360.320.330.200.250.300.450.450.240.20watts (±10%)
Chip Cavity Length CL 2500250025002500125012502500250025002500250012501250μm
Emitter Width W 4444444455555μm
Emitter Height H 1111111111111μm
Spectral Width δλ 10101010101010101010101010nm 3dB
Slope Efficiency η° 0.300.300.300.300.300.300.250.250.260.340.340.350.30W/A
Fast Axis Div.* Θ_perp 30303030303030283030303030deg FWHM
Slow Axis Div. Θ_parallel 10101010101010101010101010deg FWHM
Cap YesNoNoYesYesNoYesNoYesYesNoNoYes
Electrical
Power Conversion Eff. η 12131212141410101214141714%
Operating Current Iop 1.21.21.21.20.90.9111.21.21.20.650.65A
Threshold Current Ith 0.050.050.050.050.050.050.050.050.050.050.050.050.05A
Operating Voltage Vop 2.52.52.52.52.62.62.42.422.62.52.22.2V
Series Resistance Rs 1.31.31.31.30.190.191.61.61.31.31.322ohm
Mechanical
Weight 21.51.5221.521.5221.51.52g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Uncapped TO9 specifications assume heatsinking underneath laser chip.
Capped TO9 specifications assume heatsinking only on flat surface where pins extend.

SemiNex CorpSemiNex Corp
TO9 - Lensed


Symbol TO9-108-141 Units
Optical
Wavelength λc1640nm (±20)
Output Power (CW) P° 0.25watts (±10%)
Chip Cavity Length CL 2500μm
Emitter Width W 4μm
Emitter Height H 1μm
Spectral Width δλ 10nm 3dB
Slope Efficiency η° 0.25W/A
Fast Axis Div.* Θ_perp 28deg FWHM
Slow Axis Div. Θ_parallel 10deg FWHM
Electrical
Power Conversion Eff. η 10%
Operating Current Iop 1A
Threshold Current Ith 0.05A
Operating Voltage Vop 2.4V
Series Resistance Rs 1.6ohm
Mechanical
Weight 1.5g
Operating Temp.** -40 to 60°C
Storage Temp. -40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
*Fast and Slow axis matched - Units are deg FWHM.
Uncapped TO9 specifications assume heatsinking underneath laser chip.
Capped TO9 specifications assume heatsinking only on flat surface where pins extend.

SemiNex CorpSemiNex Corp
TO9 - Lensed Capped


Symbol TO9-105-140TO9-131-140TO9-131-140TO9-131-140TO9-131-140TO9-209-115TO9-209-140TO9-126-115TO9-116-115TO9-118-115TO9-118-140TO9-126-140 Units
Optical
Wavelength λc158016051605160516051280128014801590156515651480nm (±20)
Output Power (CW) P° 0.361.301.301.301.301.251.251.601.401.601.601.80watts (±10%)
Chip Cavity Length CL 250025002500250025001500150025002500250025002500μm
Emitter Width W 45050505050509595959595μm
Emitter Height H 111111111111μm
Spectral Width δλ 1001010010101010101010nm 3dB
Slope Efficiency η° 0.300.200.200.200.200.320.320.250.250.250.250.30W/A
Fast Axis Div.* Θ_perp 699990.3100.30.30.399deg FWHM
Slow Axis Div. Θ_parallel 109999101099999deg FWHM
Electrical
Power Conversion Eff. η 121212121215151610121213%
Operating Current Iop 1.266664468888A
Threshold Current Ith 0.050.50.50.50.50.50.50.50.50.50.50.5A
Operating Voltage Vop 2.51.81.81.81.81.91.91.421.71.71.7V
Series Resistance Rs 1.30.080.080.080.080.220.220.081.70.080.080.08ohm
Mechanical
Weight 222221.51.5221.51.51.5g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Capped TO9 specifications assume heatsinking only on flat surface where pins extend.

All statements, technical information and recommendations related to the product herein are based upon information believed to be reliable or accurate. The accuracy or completeness herein is not guaranteed, and no responsibility is assumed for any inaccuracies. The user assumes all risks and liability whatsoever in connection with the use of a product or its application. SemiNex Corporation reserves the right to change at any time without notice the design, specification, deduction, fit or form of its described herein, including withdrawal at any time of a product offered for sale herein. Users are encouraged to visit www.seminex.com for the latest data. SemiNex Corporation makes no representations that the products herein are free from any intellectual property claims of others. Please contact SemiNex for more information. � 2016 SemiNex Corporation

SemiNex Corporation ● 153 Andover St ● Danvers, MA 01923 ● 978-326-7700 ● Email: info@seminex.com ● www.seminex.com

Date Created: Dec 2 2022 11:02PM UTC