Preliminary Data Sheet

SemiNex Corp
SemiNex delivers the highest available power at infrared wavelengths between 12xx and 19xx nm. When necessary we will further optimize the design of our InP laser chips to meet our customers' specific optical and electrical performance needs. Diodes, bars and packages are tested to meet customer and market performance demands. Typical results and packaging options are shown. Contact SemiNex for additional details or to discuss your specific requirements.
SemiNex Corp
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SemiNex CorpSemiNex Corp

Triple Junction TO9- No Cap


Symbol TO9-260TO9-261TO9-262TO9-263TO9-264TO9-265TO9-266TO9-267TO9-265-141 Units
Optical
Wavelength λc155015501550155015501550155015501550nm (±20)
Output Power (<10ns) P° 25.0060.0030.0065.0040.0050.0050.0080.0050.00watts
Output Power (150ns) P° 13.5021.0021.0055.0021.0020.0030.0060.0020.00watts
Chip Cavity Length CL 150015001500150025002500250025002500μm
No. of Junctions 333333333
Emitter Width W 5095180350509518035095μm
Emitter Height H 101010101010101010μm
Spectral Width δλ 222222222222222222nm 3dB
Slope Efficiency η° 0.800.900.900.800.800.900.701.000.90W/A
Fast Axis Div.* Θ_perp 28282828282828280.3deg FWHM
Slow Axis Div. Θ_parallel 121212121212121212deg FWHM
Electrical
Power Conversion Eff. η 5446.544444%
Operating Current (<10ns) Iop 256040704080809080A
Operating Current (150ns) Iop 12.53030702040608040A
Threshold Current Ith 0.250.50.510.40.5120.5A
Operating Voltage Vop 1818221222126.57.512V
Series Resistance Rs 1.20.880.50.20.60.30.10.10.3ohm
Mechanical
Weight 000000000g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Uncapped TO9 specifications assume heatsinking underneath laser chip.



SemiNex CorpSemiNex Corp
Triple Junction TO9- Cap


Symbol TO9-260-161TO9-261-161TO9-262-161TO9-263-161TO9-264-161TO9-266-161TO9-267-161TO9-265-161TO9-267-181TO9-265-115 Units
Optical
Wavelength λc1550155015501550155015501550155015501550nm (±20)
Output Power (<10ns) P° 25.0060.0065.0070.0040.00100.00110.0050.00100.0050.00watts
Output Power (150ns) P° 13.5021.0031.0038.0021.0063.0080.0020.0070.0020.00watts
Chip Cavity Length CL 1500150015001500250025002500250025002500μm
No. of Junctions 3333333333
Emitter Width W 5095180350501803509535095μm
Emitter Height H 10101010101010101010μm
Spectral Width δλ 22222222222222222222nm 3dB
Slope Efficiency η° 0.800.900.901.000.800.901.000.901.000.90W/A
Fast Axis Div.* Θ_perp 28282828282828280.30.3deg FWHM
Slow Axis Div. Θ_parallel 12121212121212121412deg FWHM
Electrical
Power Conversion Eff. η 5444444412.54%
Operating Current (<10ns) Iop 2560657040100708010080A
Operating Current (150ns) Iop 123030352050804010040A
Threshold Current Ith 0.250.50.510.4120.520.5A
Operating Voltage Vop 1818222222247.512811V
Series Resistance Rs 1.20.880.50.40.60.250.10.30.080.3ohm
Mechanical
Weight 0000000000g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 85-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Uncapped TO9 specifications assume heatsinking underneath laser chip.



All statements, technical information and recommendations related to the product herein are based upon information believed to be reliable or accurate. The accuracy or completeness herein is not guaranteed, and no responsibility is assumed for any inaccuracies. The user assumes all risks and liability whatsoever in connection with the use of a product or its application. SemiNex Corporation reserves the right to change at any time without notice the design, specification, deduction, fit or form of its described herein, including withdrawal at any time of a product offered for sale herein. Users are encouraged to visit www.seminex.com for the latest data. SemiNex Corporation makes no representations that the products herein are free from any intellectual property claims of others. Please contact SemiNex for more information. � 2016 SemiNex Corporation

SemiNex Corporation ● 100 Corporate Place ● Peabody, MA 01960 ● 978-326-7700 ● Email: info@seminex.com ● www.seminex.com

Date Created: May 15 2021 4:11AM UTC