SemiNex delivers the highest available power at infrared wavelengths between 12xx and 19xx nm. When necessary we will further optimize the design of our InP laser chips to meet our customers' specific optical and electrical performance needs. Diodes, bars and packages are tested to meet customer and market performance demands. Typical results and packaging options are shown. Contact SemiNex for additional details or to discuss your specific requirements.
Triple Junction TO-9
High Power Single-Mode and Multi-Mode SemiNex Lasers
12xx to 19xx nm
Custom Wavelengths Available
Lensed Options Available
Applications
OEM Medical
Professional Medical
LiDAR
Military / Aerospace
Illumination
Features
Cost effective
High Output Power
High Dynamic Range
High Efficiency
Standard Low Cost Package
Triple Junction TO9- No Cap
| | Symbol | TO9-260 | TO9-264 | TO9-261 | TO9-265 | TO9-266 | TO9-262 | TO9-267 | TO9-263 | Units |
|---|
| Optical | | | | | | | | | | |
|---|
| Wavelength | λc | 1550 | 1550 | 1550 | 1550 | 1550 | 1550 | 1550 | 1550 | nm (±20) |
| Output Power (<10ns) | P° | 25.00 | 25.00 | 30.00 | 50.00 | 60.00 | 50.00 | 100.00 | 70.00 | watts (±10%) |
| Output Power (150ns) | P° | 13.50 | 15.00 | 25.00 | 35.00 | 52.00 | 40.00 | 75.00 | 60.00 | watts (±10%) |
| Chip Cavity Length | CL | 1500 | 2500 | 1500 | 2500 | 2500 | 1500 | 2500 | 1500 | μm |
| No. of Junctions | | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | |
| Emitter Width | W | 50 | 50 | 95 | 95 | 180 | 180 | 350 | 350 | μm |
| Emitter Height | H | 10 | 10 | 10 | 10 | 10 | 10 | 10 | 10 | μm |
| Spectral Width | δλ | 22 | 22 | 22 | 22 | 22 | 22 | 22 | 22 | nm 3dB |
| Slope Efficiency | η° | 0.80 | 0.80 | 0.90 | 0.90 | 0.90 | 0.90 | 1.00 | 0.80 | W/A |
| Fast Axis Div.* | Θ_perp | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | deg FWHM |
| Slow Axis Div. | Θ_parallel | 12 | 12 | 12 | 12 | 12 | 12 | 12 | 12 | deg FWHM |
| Electrical | | | | | | | | | | |
|---|
| Power Conversion Eff. | η | 5 | 8 | 4 | 8 | 9 | 8.3 | 9 | 8.3 | % |
| Operating Current (<10ns) | Iop | 25 | 40 | 30 | 50 | 60 | 50 | 100 | 70 | A |
| Operating Current (150ns) | Iop | 12.5 | 20 | 30 | 40 | 56 | 40 | 75 | 60 | A |
| Threshold Current | Ith | 0.25 | 0.4 | 0.5 | 2 | 2 | 1.5 | 2 | 1.5 | A |
| Operating Voltage | Vop | 10 | 9 | 18 | 10 | 10 | 12 | 11 | 12 | V |
| Mechanical | | | | | | | | | | |
|---|
| Weight | | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | g |
| Operating Temp.** | | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | °C |
| Storage Temp. | | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | °C |
Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Uncapped TO9 specifications assume heatsinking underneath laser chip.
Triple Junction TO9- Cap
| | Symbol | TO9-264-181 | TO9-264-161 | TO9-260-161 | TO9-261-161 | TO9-265-161 | TO9-266-161 | TO9-262-161 | TO9-267-161 | TO9-263-161 | Units |
|---|
| Optical | | | | | | | | | | | |
|---|
| Wavelength | λc | 1550 | 1550 | 1550 | 1550 | 1550 | 1550 | 1550 | 1550 | 1550 | nm (±20) |
| Output Power (<10ns) | P° | 40.00 | 40.00 | 25.00 | 30.00 | 50.00 | 60.00 | 50.00 | 100.00 | 70.00 | watts (±10%) |
| Output Power (150ns) | P° | 15.00 | 15.00 | 15.00 | 25.00 | 35.00 | 52.00 | 40.00 | 75.00 | 65.00 | watts (±10%) |
| Chip Cavity Length | CL | 2500 | 2500 | 1500 | 1500 | 2500 | 2500 | 1500 | 2500 | 1500 | μm |
| No. of Junctions | | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | |
| Emitter Width | W | 50 | 50 | 50 | 95 | 95 | 180 | 180 | 350 | 350 | μm |
| Emitter Height | H | 10 | 10 | 10 | 10 | 10 | 10 | 10 | 10 | 10 | μm |
| Spectral Width | δλ | 22 | 22 | 22 | 22 | 22 | 22 | 22 | 22 | 22 | nm 3dB |
| Slope Efficiency | η° | 0.80 | 0.80 | 0.80 | 0.90 | 0.90 | 0.90 | 0.90 | 1.00 | 1.00 | W/A |
| Fast Axis Div.* | Θ_perp | 0.3 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | deg FWHM |
| Slow Axis Div. | Θ_parallel | 12 | 12 | 12 | 12 | 12 | 12 | 12 | 12 | 12 | deg FWHM |
| Electrical | | | | | | | | | | | |
|---|
| Power Conversion Eff. | η | 9 | 9 | 8 | 4 | 8 | 8 | 4 | 8 | 4 | % |
| Operating Current (<10ns) | Iop | 40 | 40 | 25 | 30 | 50 | 60 | 50 | 100 | 70 | A |
| Operating Current (150ns) | Iop | 20 | 20 | 20 | 30 | 40 | 56 | 40 | 75 | 60 | A |
| Threshold Current | Ith | 0.4 | 0.4 | 0.25 | 0.5 | 0.5 | 2 | 1.5 | 2 | 1.5 | A |
| Operating Voltage | Vop | 9 | 9 | 10 | 18 | 10 | 10 | 22 | 10 | 22 | V |
| Mechanical | | | | | | | | | | | |
|---|
| Weight | | 1.6 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | g |
| Operating Temp.** | | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | °C |
| Storage Temp. | | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | °C |
Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Uncapped TO9 specifications assume heatsinking underneath laser chip.
All statements, technical information and recommendations related to the product herein are based upon information believed to be reliable
or accurate. The accuracy or completeness herein is not guaranteed, and no responsibility is assumed for any
inaccuracies. The user assumes all risks and liability whatsoever in connection with the use of a product or its application.
SemiNex Corporation reserves the right to change at any time without notice the design, specification, deduction, fit or form of its described
herein, including withdrawal at any time of a product offered for sale herein. Users are encouraged to visit www.seminex.com for the latest
data. SemiNex Corporation makes no representations that the products herein are free from any intellectual property claims of others.
Please contact SemiNex for more information. � 2016 SemiNex Corporation
SemiNex Corporation ● 153 Andover St ● Danvers, MA 01923 ● 978-326-7700 ● Email: info@seminex.com ● www.seminex.com
Date Created: Sep 21 2023 8:35AM UTC