Preliminary Data Sheet

SemiNex Corp
SemiNex delivers the highest available power at infrared wavelengths between 12xx and 19xx nm. When necessary we will further optimize the design of our InP laser chips to meet our customers' specific optical and electrical performance needs. Diodes, bars and packages are tested to meet customer and market performance demands. Typical results and packaging options are shown. Contact SemiNex for additional details or to discuss your specific requirements.
SemiNex Corp
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SemiNex CorpSemiNex Corp

Triple Junction TO9- No Cap


Symbol TO9-260TO9-264TO9-261TO9-265TO9-265-141TO9-266TO9-262TO9-267TO9-263 Units
Optical
Wavelength λc155015501550155015501550155015501550nm (±20)
Output Power (<10ns) P° 25.0025.0030.0050.0050.0060.0050.00100.0070.00watts (±10%)
Output Power (150ns) P° 13.5015.0025.0035.0035.0055.0040.0075.0060.00watts (±10%)
Chip Cavity Length CL 150025001500250025002500150025001500μm
No. of Junctions 333333333
Emitter Width W 5050959595180180350350μm
Emitter Height H 101010101010101010μm
Spectral Width δλ 222222222222222222nm 3dB
Slope Efficiency η° 0.800.800.900.900.900.900.901.000.80W/A
Fast Axis Div.* Θ_perp 282828280.328282828deg FWHM
Slow Axis Div. Θ_parallel 121212121212121212deg FWHM
Electrical
Power Conversion Eff. η 5848898.398.3%
Operating Current (<10ns) Iop 2540305050605010070A
Operating Current (150ns) Iop 12.52030404060408060A
Threshold Current Ith 0.250.40.520.521.521.5A
Operating Voltage Vop 10918101010121112V
Series Resistance Rs 0.80.50.880.30.30.160.30.10.2ohm
Mechanical
Weight 000000000g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 85-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 85-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Uncapped TO9 specifications assume heatsinking underneath laser chip.



SemiNex CorpSemiNex Corp
Triple Junction TO9- Cap


Symbol TO9-264-161TO9-260-161TO9-261-161TO9-265-161TO9-265-115TO9-262-161TO9-266-161TO9-263-161TO9-267-161 Units
Optical
Wavelength λc155015501550155015501550155015501550nm (±20)
Output Power (<10ns) P° 40.0025.0030.0050.0060.0050.0060.0070.00100.00watts (±10%)
Output Power (150ns) P° 15.0015.0025.0035.0035.0040.0055.0065.0075.00watts (±10%)
Chip Cavity Length CL 250015001500250025001500250015002500μm
No. of Junctions 333333333
Emitter Width W 5050959595180180350350μm
Emitter Height H 101010101010101010μm
Spectral Width δλ 222222222222222222nm 3dB
Slope Efficiency η° 0.800.800.900.900.900.900.901.001.00W/A
Fast Axis Div.* Θ_perp 282828280.328282828deg FWHM
Slow Axis Div. Θ_parallel 121212121212121212deg FWHM
Electrical
Power Conversion Eff. η 984894848%
Operating Current (<10ns) Iop 4025305060506070100A
Operating Current (150ns) Iop 202030404040506080A
Threshold Current Ith 0.40.250.50.50.51.521.52A
Operating Voltage Vop 91018101122102210V
Series Resistance Rs 0.50.50.880.30.30.50.20.40.1ohm
Mechanical
Weight 000000000g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
Uncapped TO9 specifications assume heatsinking underneath laser chip.



All statements, technical information and recommendations related to the product herein are based upon information believed to be reliable or accurate. The accuracy or completeness herein is not guaranteed, and no responsibility is assumed for any inaccuracies. The user assumes all risks and liability whatsoever in connection with the use of a product or its application. SemiNex Corporation reserves the right to change at any time without notice the design, specification, deduction, fit or form of its described herein, including withdrawal at any time of a product offered for sale herein. Users are encouraged to visit www.seminex.com for the latest data. SemiNex Corporation makes no representations that the products herein are free from any intellectual property claims of others. Please contact SemiNex for more information. � 2016 SemiNex Corporation

SemiNex Corporation ● 100 Corporate Place ● Peabody, MA 01960 ● 978-326-7700 ● Email: info@seminex.com ● www.seminex.com

Date Created: Dec 4 2021 7:11AM UTC