Preliminary Data Sheet

SemiNex Corp
SemiNex delivers SOAs with the highest gain and available saturation power at infrared wavelengths. When necessary we will further optimize the design of our InP SOA to meet our customers' specific optical and electrical performance needs. Single waveguide or arrays are tested to meet customer and market performance demands. Typical results and packaging options are shown. Contact SemiNex for additional details or performance demands.
SemiNex Corp
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SOA Bars
Symbol BAR-178BAR-184BAR-177BAR-183 Units
Optical
Wavelength λc1310131015501550nm (±20)
Saturation Output Power@6000ma Psat 2200220020002000mW (±10%)
Output Power@4000ma Pout 1600160014001400mW (±10%)
Number of Emitters 4444
Aperture Width AW 4444μm
Aperture Height AH 1111μm
Spectral Width δλ 85858585nm @ 3dB
Gain @ Pin=10μW G 40404040 dB
Beam Exit Angle ΘEXT 19.519.519.519.5degree
Noise Figure NF 6666 db
Polarization Extinction Ratio PER 18181818 dB
Fast Axis Div. Θ_perp 30303030 deg FWHM
Slow Axis Div. Θ_parallel 16162020 deg FWHM
Front Facet Reflectivity <0.1%<0.1%<0.1%<0.1%
Rear Face Reflectivity <0.1%<0.1%<0.1%<0.1%
Waveguide CurvedTilted StraightCurvedTilted Straight
Waveguide Pitch 127500127500 um
Electrical
Operating Voltage Vop 2222V
Operating Current Iop 4444A
Series Resistance Rs 0.50.50.50.5ohm
Mechanical
Chip Length CL 2500250025002500 μm
Chip Width W 62520006252000 μm
Weight 0.050.050.050.05g
Operating Temp.** -40 to 100-40 to 100-40 to 100-40 to 100°C
Storage Temp. -40 to 100-40 to 100-40 to 100-40 to 100°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.



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Gain Bars


Symbol BAR-181BAR-179 Units
Optical
Wavelength λc13101550nm (±20)
Saturation Output Power@6000ma Psat 22002000mW (±10%)
Output Power@4000ma Pout 16001400mW (±10%)
Number of Emitters 44
Aperture Width AW 44μm
Aperture Height AH 11μm
Spectral Width δλ 8585nm @ 3dB
Gain @ Pin=10μW G 4040 dB
Beam Exit Angle ΘEXT 19.519.5degree
Noise Figure NF 66 db
Polarization Extinction Ratio PER 1818 dB
Fast Axis Div. Θ_perp 3030 deg FWHM
Slow Axis Div. Θ_parallel 1620 deg FWHM
Front Facet Reflectivity <0.1%<0.1%
Rear Face Reflectivity 98%98%
Waveguide CurvedCurved
Waveguide Pitch 127127 um
Electrical
Operating Voltage Vop 22V
Operating Current Iop 44A
Series Resistance Rs 0.50.5ohm
Mechanical
Chip Length CL 25002500 μm
Chip Width W 625625 μm
Weight 0.050.05g
Operating Temp.** -40 to 100-40 to 100°C
Storage Temp. -40 to 100-40 to 100°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
*CW As measured on a C-Mount with Indium solder

All statements, technical information and recommendations related to the product herein are based upon information believed to be reliable or accurate. The accuracy or completeness herein is not guaranteed, and no responsibility is assumed for any inaccuracies. The user assumes all risks and liability whatsoever in connection with the use of a product or its application. SemiNex Corporation reserves the right to change at any time without notice the design, specification, deduction, fit or form of its described herein, including withdrawal at any time of a product offered for sale herein. Users are encouraged to visit www.seminex.com for the latest data. SemiNex Corporation makes no representations that the products herein are free from any intellectual property claims of others. Please contact SemiNex for more information. � 2016 SemiNex Corporation

SemiNex Corporation ● 153 Andover St ● Danvers, MA 01923 ● 978-326-7700 ● Email: info@seminex.com ● www.seminex.com

Date Created: Aug 9 2022 2:19PM UTC