SemiNex Corp
SemiNex delivers the highest available power at infrared wavelengths between 12xx and 19xx nm. When necessary we will further optimize the design of our InP laser chips to meet our customers' specific optical and electrical performance needs. Diodes, bars and packages are tested to meet customer and market performance demands. Typical results and packaging options are shown. Contact SemiNex for additional details or to discuss your specific requirements.
SemiNex Corp
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All statements, technical information and recommendations related to the product herein are based upon information believed to be reliable or accurate. The accuracy or completeness herein is not guaranteed, and no responsibility is assumed for any inaccuracies. The user assumes all risks and liability whatsoever in connection with the use of a product or its application. SemiNex Corporation reserves the right to change at any time without notice the design, specification, deduction, fit or form of its described herein, including withdrawal at any time of a product offered for sale herein. Users are encouraged to visit www.seminex.com for the latest data. SemiNex Corporation makes no representations that the products herein are free from any intellectual property claims of others. Please contact SemiNex for more information. © 2016 SemiNex Corporation

SemiNex Corporation ● 100 Corporate Place ● Peabody, MA 01960 ● 978-326-7700 ● Email: info@seminex.com ● www.seminex.com

Date Created: UTC

SemiNex CorpSemiNex Corp

Laser Chips


Symbol CHP-236CHP-103CHP-178CHP-105CHP-196CHP-108CHP-107CHP-113CHP-162CHP-120CHP-124CHP-123CHP-190CHP-191CHP-251 Units
Optical
Wavelength λc131013101325147014701480148815321540156015601560162516501940nm (±20)
Output Power (CW)* P° 2.405.701.005.007.005.007.004.205.601.404.205.603.503.201.00watts (±10%)
Chip Cavity Length CL 250025002500250025002500250025002500125025002500250025001500μm
Chip Width W 500500500500500500500500500500500500500500500nm
Emitter Width W 95953095350951809518050951809595150μm
Emitter Height H 111111111111111μm
Spectral Width δλ 151515151515151515151515151510nm 3dB
Slope Efficiency η° 0.500.500.500.400.450.380.370.350.400.300.350.350.300.220.21W/A
Fast Axis Div. Θ_perp 282828282828282828282828282844deg FWHM
Slow Axis Div. Θ_parallel 9999999999999911deg FWHM
Electrical
Power Conversion Eff. η 282822212522211823131823151320%
Threshold Current Ith 0.50.50.50.520.50.50.510.50.50.50.50.50.5A
Operating Current Iop 91231420132114146141614144A
Operating Voltage Vop 1.71.71.71.71.351.71.71.71.71.71.71.51.71.71.3V
Series Resistance Rs 0.050.050.60.050.0150.50.050.050.1210.160.050.090.050.050.3ohm
Mechanical
Weight 0.050.050.050.050.050.050.050.050.050.050.050.050.050.050.05g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 85-40 to 60-40 to 60-40 to 60-40 to 85-40 to 60+15 to 30°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 85-40 to 80-40 to 80-40 to 80-40 to 85-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.

SemiNex CorpSemiNex Corp
Single Mode Laser Chips


Symbol CHP-176CHP-156CHP-179CHP-115CHP-144CHP-155 Units
Optical
Wavelength λc131513151550155016301650nm (±20)
Output Power (CW)* P° 0.590.720.420.400.300.22watts (±10%)
Chip Cavity Length CL 125015001500125012501250μm
Chip Width W 500500500500500500nm
Emitter Width W 554445μm
Emitter Height H 111111μm
Spectral Width δλ 151515151515nm 3dB
Slope Efficiency η° 0.500.550.500.300.300.30W/A
Fast Axis Div. Θ_perp 303030303030deg FWHM
Slow Axis Div. Θ_parallel 131313131313deg FWHM
Electrical
Power Conversion Eff. η 1429141112.59%
Threshold Current Ith 0.050.050.050.050.050.05A
Operating Current Iop 1.21.31.20.950.80.65A
Operating Voltage Vop 3.62.63.62.72.92.7V
Series Resistance Rs 111111ohm
Mechanical
Weight 0.050.050.050.050.050.05g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
*CW As measured on a C-Mount with Indium solder

SemiNex CorpSemiNex Corp
Single Mode Laser Chips Long Cavity


Symbol CHP-288CHP-289CHP-290CHP-177CHP-194CHP-285CHP-286CHP-287CHP-122CHP-185CHP-184CHP-128 Units
Optical
Wavelength λc131013101310132015321550155015501555157016301650nm (±20)
Output Power (CW)* P° 0.400.400.400.700.600.350.350.350.600.630.450.45watts (±10%)
Chip Cavity Length CL 250025002500250025002500250025002500375025002500μm
Chip Width W 500500500500500500500500500500500500nm
Emitter Width W 444544444444μm
Emitter Height H 111111111111μm
Spectral Width δλ 858585151585858515151515nm 3dB
Slope Efficiency η° 0.400.400.000.450.330.350.000.350.500.250.280.30W/A
Fast Axis Div. Θ_perp 303030303030303030303030deg FWHM
Slow Axis Div. Θ_parallel 161616131320202013131313deg FWHM
Electrical
Power Conversion Eff. η 20202020142017.517.51179.314%
Threshold Current Ith 0.50.50.050.050.050.050.050.050.050.10.050.05A
Operating Current Iop 1111.61.81111.82.31.61.6A
Operating Voltage Vop 2222.23.62223.62.633.6V
Series Resistance Rs 2221.35122210.811ohm
Mechanical
Weight 0.050.050.050.050.050.050.050.050.050.050.050.05g
Operating Temp.** -40 to 100-40 to 100-40 to 100-40 to 60-40 to 60-40 to 100-40 to 100-40 to 100-40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 100-40 to 100-40 to 100-40 to 80-40 to 80-40 to 100-40 to 100-40 to 100-40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
*CW As measured on a C-Mount with Indium solder

SemiNex CorpSemiNex Corp
Pulsed* Laser Chips


Symbol CHP-180CHP-148CHP-175CHP-149CHP-150CHP-157CHP-152CHP-151 Units
Optical
Wavelength λc15651560155015501565156015501550nm (±20)
Output Power (<10ns) P° 14.0014.0018.0025.0040.0028.0040.0060.00watts (±10%)
Output Power (150ns) P° 5.509.009.0014.0024.0015.0020.0030.00watts (±10%)
Chip Cavity Length CL 12502500124025002500125012502500μm
Chip Width W 500500500500500500500500um
No. of Junctions 11111111
Emitter Width W 50509595180180350350μm
Emitter Height H 11111111μm
Spectral Width δλ 1515151515151515nm 3dB
Slope Efficiency η° 0.350.200.300.250.250.400.400.35W/A
Fast Axis Div. Θ_perp 3030303030302830deg FWHM
Slow Axis Div. Θ_parallel 101410101414910deg FWHM
Electrical
Power Conversion Eff. η 174443873.75%
Threshold Current Ith 0.40.50.50.720.80.752.5A
Operating Current (<10ns) Iop 40706010016070100200A
Operating Current (150ns) Iop 20353050803550100A
Operating Voltage Vop 5.84.783.59.54.85.88V
Series Resistance Rs 0.20.110.10.050.140.120.10.07ohm
Mechanical
Weight 0.050.050.050.050.050.050.050.05g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80°C

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
*Pulsed as measured on a C-Mount with Indium solder - P-Side Down.

All statements, technical information and recommendations related to the product herein are based upon information believed to be reliable or accurate. The accuracy or completeness herein is not guaranteed, and no responsibility is assumed for any inaccuracies. The user assumes all risks and liability whatsoever in connection with the use of a product or its application. SemiNex Corporation reserves the right to change at any time without notice the design, specification, deduction, fit or form of its described herein, including withdrawal at any time of a product offered for sale herein. Users are encouraged to visit www.seminex.com for the latest data. SemiNex Corporation makes no representations that the products herein are free from any intellectual property claims of others. Please contact SemiNex for more information. � 2016 SemiNex Corporation

SemiNex Corporation ● 153 Andover St ● Danvers, MA 01923 ● 978-326-7700 ● Email: info@seminex.com ● www.seminex.com

Date Created: Aug 9 2022 1:35PM UTC