SemiNex Corp
SemiNex delivers the highest available power at infrared wavelengths between 12xxnm and 16xxnm as well 19xxnm to 24xxnm. When necessary we will further optimize the design of our InP or GaSb laser chips to meet our customers' specific optical and electrical performance needs. Diodes, bars and packages are tested to meet customer and market performance demands. Typical results and packaging options are shown. Contact SemiNex for additional details or to discuss your specific requirements.Grin Lens f=274um used to match fast axis divergence to slow axis divergence.
SemiNex Corp
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SemiNex CorpSemiNex Corp
B-Mount


Symbol B-161B-160B-103B-123B-104B-106B-109B-118B-136B-134B-193B-165B-149 Units
Optical
Wavelength λc1270127013101350146014701509155015501650194019401940nm (±20)
Output Power (CW) P° 4.505.505.705.605.005.004.204.202.803.201.501.101.00watts (±10%)
Chip Cavity Length CL 1500250025002500250025002500250025002500150015001500μm
Emitter Width W 95959595959595955095180150150μm
Emitter Height H 1111111111111μm
Spectral Width δλ 10101515151515151515101010nm 3dB
Slope Efficiency η° 0.500.500.400.400.400.400.350.350.250.300.250.300.25W/A
Fast Axis Div.* Θ_perp 30302828282828282828442.844deg FWHM
Slow Axis Div. Θ_parallel 1010999999149111111deg FWHM
Electrical
Power Conversion Eff. η 2525232221211818416172017%
Threshold Current Ith 0.50.50.50.50.50.50.50.50.50.50.50.350.5A
Operating Current Iop 912141414141414912644A
Operating Voltage Vop 1.91.71.81.81.71.81.71.761.71.51.31.3V
Mechanical
Weight 0.50.50.50.50.50.50.50.50.50.50.50.50.5g
Operating Temp.** -40 to 60-40 to 60-40 to 85-40 to 85-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 85+15 to 30+15 to 3515 to 30°C
Storage Temp. -40 to 80-40 to 80-40 to 85-40 to 85-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 85-40 to 80-40 to 80-40 to 80°C
Operating Voltage Min. 1.81.71.81.81.91.91.51.501.61.211.1V
Operating Voltage Max. 2222221.61.601.71.321.3V

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
*Fast Axis Divergence can be changed with lens option.

SemiNex CorpSemiNex Corp
B-Mount Single Mode


Symbol B-125B-115B-146B-124 Units
Optical
Wavelength λc1320155516251660nm (±20)
Output Power (CW) P° 0.800.600.400.45watts (±10%)
Chip Cavity Length CL 2500250025002500μm
Emitter Width W 5445μm
Emitter Height H 1111μm
Spectral Width δλ 15151515nm 3dB
Slope Efficiency η° 0.500.300.300.25W/A
Fast Axis Div.* Θ_perp 30303030deg FWHM
Slow Axis Div. Θ_parallel 12101010deg FWHM
Electrical
Power Conversion Eff. η 17111114%
Threshold Current Ith 0.050.50.050.05A
Operating Current Iop 1.71.81.61.4A
Operating Voltage Vop 2.73.23.12.2V
Mechanical
Weight 0.50.50.50.5g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80°C
Operating Voltage Min. 2.32.432.1V
Operating Voltage Max. 2.52.53.12.2V

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
*Fast Axis Divergence can be changed with lens option.

SemiNex CorpSemiNex Corp
B-Mount With Lens


Symbol B-161-141B-161-134B-160-141B-160-134B-103-118B-103-134B-123-118B-123-134B-104-118B-104-134B-106-118B-106-134B-109-118B-109-134B-118-118B-118-134B-134-134B-134-118B-149-134B-149-141B-165-131 Units
Optical
Wavelength λc127012701270127013251325138013801460146014801480154015401565156516501650194019401940nm (±20)
Output Power (CW) P° 4.504.505.505.505.505.505.405.404.804.804.804.804.004.004.004.003.003.001.001.001.10watts (±10%)
Chip Cavity Length CL 150015002500250025002500250025002500250025002500250025002500250025002500150015001500μm
Emitter Width W 959595959595959595959595959595959595150150150μm
Emitter Height H 111111111111111111111μm
Spectral Width δλ 101010101515151515151515151515151515101010nm 3dB
Slope Efficiency η° 0.500.500.450.450.500.500.450.450.400.400.400.400.350.350.350.350.300.300.300.300.30W/A
Fast Axis Div.* Θ_perp 0.690.690.690.690.690.690.690.6990.6110.32.8deg FWHM
Slow Axis Div. Θ_parallel 999999999999999999111111deg FWHM
Electrical
Power Conversion Eff. η 252525252222232321212121181818181313202020%
Threshold Current Ith 0.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.350.350.35A
Operating Current Iop 9912121414141414141414141414141212444A
Operating Voltage Vop 1.91.91.71.71.81.81.81.81.71.71.81.81.71.71.71.71.71.71.51.51.3V
Mechanical
Weight 0.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.5g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 60-40 to 6015 to 30+15 to 30+15 to 35°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80-40 to 80°C
Operating Voltage Min. 111.51.51.71.71.71.71.91.91.91.81.51.51.51.51.61.61.11.11V
Operating Voltage Max. 1.81.81.61.61.81.81.81.822221.61.61.61.61.71.71.21.22V

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
*Fast Axis Divergence can be changed with lens option.

All statements, technical information and recommendations related to the product herein are based upon information believed to be reliable or accurate. The accuracy or completeness herein is not guaranteed, and no responsibility is assumed for any inaccuracies. The user assumes all risks and liability whatsoever in connection with the use of a product or its application. SemiNex Corporation reserves the right to change at any time without notice the design, specification, deduction, fit or form of its described herein, including withdrawal at any time of a product offered for sale herein. Users are encouraged to visit www.seminex.com for the latest data. SemiNex Corporation makes no representations that the products herein are free from any intellectual property claims of others. Please contact SemiNex for more information. � 2016 SemiNex Corporation

SemiNex Corporation ● 153 Andover St ● Danvers, MA 01923 ● 978-326-7700 ● Email: info@seminex.com ● www.seminex.com

Date Created: May 31 2023 8:39PM UTC