SemiNex Corp
SemiNex delivers the highest available power at infrared wavelengths between 12xxnm and 16xxnm as well 19xxnm to 24xxnm. When necessary we will further optimize the design of our InP or GaSb laser chips to meet our customers' specific optical and electrical performance needs. Diodes, bars and packages are tested to meet customer and market performance demands. Typical results and packaging options are shown. Contact SemiNex for additional details or to discuss your specific requirements.Grin Lens f=274um used to match fast axis divergence to slow axis divergence.
SemiNex Corp
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SemiNex CorpSemiNex Corp
B-Mount


Symbol B-103B-123B-104B-106B-122B-118B-134B-165 Units
Optical
Wavelength λc13101350145014701470155016501940nm (±20)
Output Power (CW) P° 5.705.605.005.007.004.203.201.10watts (±10%)
Chip Cavity Length CL 25002500250025002500250025001500μm
Emitter Width W 959595951809595150μm
Emitter Height H 11111111μm
Spectral Width δλ 1515151515151510nm 3dB
Slope Efficiency η° 0.400.400.400.400.370.350.300.30W/A
Fast Axis Div.* Θ_perp 282828282828282.8deg FWHM
Slow Axis Div. Θ_parallel 999999911deg FWHM
Electrical
Power Conversion Eff. η 2322212121181620%
Threshold Current Ith 0.50.50.50.50.50.50.50.35A
Operating Current Iop 141414142014124A
Operating Voltage Vop 1.81.81.71.81.71.71.71.3V
Mechanical
Weight 0.50.50.50.50.50.50.50.5g
Operating Temp.** -40 to 85-40 to 85-40 to 60-40 to 60-40 to 60-40 to 60-40 to 85+15 to 35°C
Storage Temp. -40 to 85-40 to 85-40 to 80-40 to 80-40 to 80-40 to 80-40 to 85-40 to 80°C
Operating Voltage Min. 1.81.81.91.901.51.61V
Operating Voltage Max. 222201.61.72V

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
*Fast Axis Divergence can be changed with lens option.

SemiNex CorpSemiNex Corp
B-Mount Single Mode


Symbol B-163B-115B-146B-124 Units
Optical
Wavelength λc1320155516251660nm (±20)
Output Power (CW) P° 0.800.600.400.45watts (±10%)
Chip Cavity Length CL 2500250025002500μm
Emitter Width W 4445μm
Emitter Height H 1111μm
Spectral Width δλ 15151515nm 3dB
Slope Efficiency η° 0.500.300.300.25W/A
Fast Axis Div.* Θ_perp 30303030deg FWHM
Slow Axis Div. Θ_parallel 10101010deg FWHM
Electrical
Power Conversion Eff. η 15111114%
Threshold Current Ith 0.050.050.050.05A
Operating Current Iop 21.81.61.4A
Operating Voltage Vop 2.73.23.12.2V
Mechanical
Weight 0.50.50.50.5g
Operating Temp.** -40 to 60-40 to 60-40 to 60-40 to 60°C
Storage Temp. -40 to 80-40 to 80-40 to 80-40 to 80°C
Operating Voltage Min. 02.432.1V
Operating Voltage Max. 02.53.12.2V

Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
*Fast Axis Divergence can be changed with lens option.

SemiNex CorpSemiNex Corp
B-Mount With Lens


Specified values are rated at a constant heat sink temperature of 20°C.
**Specified operating conditions are based on 20C heat sink temperature. High temperature operation will reduce performance and MTTF.
Unless otherwise indicated all values are nominal.
*Fast Axis Divergence can be changed with lens option.

All statements, technical information and recommendations related to the product herein are based upon information believed to be reliable or accurate. The accuracy or completeness herein is not guaranteed, and no responsibility is assumed for any inaccuracies. The user assumes all risks and liability whatsoever in connection with the use of a product or its application. SemiNex Corporation reserves the right to change at any time without notice the design, specification, deduction, fit or form of its described herein, including withdrawal at any time of a product offered for sale herein. Users are encouraged to visit www.seminex.com for the latest data. SemiNex Corporation makes no representations that the products herein are free from any intellectual property claims of others. Please contact SemiNex for more information. � 2016 SemiNex Corporation

SemiNex Corporation ● 153 Andover St ● Danvers, MA 01923 ● 978-326-7700 ● Email: info@seminex.com ● www.seminex.com

Date Created: May 19 2024 2:56AM UTC